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dc.contributor.authorMatana, Luza Lucas
dc.contributor.authorSöderström, Daniel
dc.contributor.authorPuchner, Helmut
dc.contributor.authorAlía, Rubén García
dc.contributor.authorLetiche, Manon
dc.contributor.authorCazzaniga, Carlo
dc.contributor.authorBosio, Alberto
dc.contributor.authorDilillo, Luigi
dc.date.accessioned2022-11-28T08:18:33Z
dc.date.available2022-11-28T08:18:33Z
dc.date.issued2022
dc.identifier.citationMatana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. <i>Microelectronics Reliability</i>, <i>128</i>, Article 114406. <a href="https://doi.org/10.1016/j.microrel.2021.114406" target="_blank">https://doi.org/10.1016/j.microrel.2021.114406</a>
dc.identifier.otherCONVID_102276074
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/84102
dc.description.abstractThe field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.en
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofseriesMicroelectronics Reliability
dc.rightsCC BY-NC-ND 4.0
dc.subject.otherNeutron
dc.subject.otherSelf-refresh
dc.subject.otherDRAM
dc.subject.otherSEE
dc.subject.otherStuck bits
dc.subject.otherHyperRAM
dc.titleNeutron-induced effects on a self-refresh DRAM
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202211285381
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn0026-2714
dc.relation.volume128
dc.type.versionacceptedVersion
dc.rights.copyright© 2021 Elsevier Ltd. All rights reserved
dc.rights.accesslevelopenAccessfi
dc.relation.grantnumber721624
dc.relation.grantnumber721624
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA
dc.subject.ysoneutronit
dc.subject.ysohiukkassäteily
dc.subject.ysoelektroniikkakomponentit
dc.subject.ysosäteilyfysiikka
dc.subject.ysokäyttömuistit
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p15394
jyx.subject.urihttp://www.yso.fi/onto/yso/p457
jyx.subject.urihttp://www.yso.fi/onto/yso/p9652
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p15250
dc.rights.urlhttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.relation.doi10.1016/j.microrel.2021.114406
dc.relation.funderEuropean Commissionen
dc.relation.funderEuroopan komissiofi
jyx.fundingprogramMSCA Innovative Training Networks (ITN)en
jyx.fundingprogramMSCA Innovative Training Networks (ITN)fi
jyx.fundinginformationThis study has been achieved thanks to the financial support of the VAN ALLEN Foundation (Contract No. UM 181387) and the Region Occitanie (Contract No. UM 181386). This study has received funding from the European Union's Horizon 2020 - Research and Innovation Framework Programme under the MSC grant agreement no. 721624, for the RADSAGA project. This work has been partially founded by the projects “IDEX Lyon OdeLe”. The experiment(s) on D50 (INDU-178) at ILL have been performed within the “Characterisation Program” of the IRT Nanoelec, co-funded by the French government in the frame of the “Programme d'Investissements d'Avenir” under the reference ANR-10-AIRT-05.
dc.type.okmA1


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