Neutron-induced effects on a self-refresh DRAM
Matana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability, 128, Article 114406. https://doi.org/10.1016/j.microrel.2021.114406
Published inMicroelectronics Reliability
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The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells. ...
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Related funder(s)European Commission
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Additional information about fundingThis study has been achieved thanks to the financial support of the VAN ALLEN Foundation (Contract No. UM 181387) and the Region Occitanie (Contract No. UM 181386). This study has received funding from the European Union's Horizon 2020 - Research and Innovation Framework Programme under the MSC grant agreement no. 721624, for the RADSAGA project. This work has been partially founded by the projects “IDEX Lyon OdeLe”. The experiment(s) on D50 (INDU-178) at ILL have been performed within the “Characterisation Program” of the IRT Nanoelec, co-funded by the French government in the frame of the “Programme d'Investissements d'Avenir” under the reference ANR-10-AIRT-05. ...
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