The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
Coronetti, A., Alía, R. G., Cecchetto, M., Hajdas, W., Söderström, D., Javanainen, A., & Saigné, F. (2020). The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment. IEEE Transactions on Nuclear Science, 67(7), 1606-1613. https://doi.org/10.1109/TNS.2020.2978228
Julkaistu sarjassa
IEEE Transactions on Nuclear ScienceTekijät
Päivämäärä
2020Tekijänoikeudet
© Authors, 2020
The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets and for Single Event Latchup. RPP (Rectangular ParallelePiped) models built to fit proton data confirm the existence of the pion SEE cross section resonance. The impact on current Radiation Hardness Assurance (RHA) Soft Error Rate (SER) predictions is however minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the High Energy Hadron equivalence approximation established for testing in mixed-field facilities.
Julkaisija
Institute of Electrical and Electronics EngineersISSN Hae Julkaisufoorumista
0018-9499Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/34930007
Metadata
Näytä kaikki kuvailutiedotKokoelmat
Lisätietoja rahoituksesta
10.13039/501100000780-European CommissionLisenssi
Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
-
The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance
Coronetti, Andrea; Alia Garcia, Ruben; Cerutti, Francesco; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigne, Frederic (Institute of Electrical and Electronics Engineers (IEEE), 2021)Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event ... -
0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
Cecchetto, Matteo; Alia, Ruben Garcia; Wrobel, Frederic; Coronetti, Andrea; Bilko, Kacper; Lucsanyi, David; Fiore, Salvatore; Bazzano, Giulia; Pirovano, Elisa; Nolte, Ralf (Institute of Electrical and Electronics Engineers (IEEE), 2021)Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs manufactured in scaled technologies, with respect to high-energy neutrons. Their contribution is evaluated in accelerator, ... -
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Martinella, Corinna; Alia, R. G.; Stark, R.; Coronetti, Andrea; Cazzaniga, C.; Kastriotou, M.; Kadi, Y.; Gaillard, R.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2021)Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and ... -
Neutron-induced effects on a self-refresh DRAM
Matana, Luza Lucas; Söderström, Daniel; Puchner, Helmut; Alía, Rubén García; Letiche, Manon; Cazzaniga, Carlo; Bosio, Alberto; Dilillo, Luigi (Elsevier, 2022)The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a ... -
Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study
Matana Luza, Lucas; Söderström, Daniel; Pio de Mattos, Andre Martins; Bezerra, Eduardo Augusto; Cazzaniga, Carlo; Kastriotou, Maria; Poivey, Christian; Dilillo, Luigi (IEEE, 2021)This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under ...
Ellei toisin mainittu, julkisesti saatavilla olevia JYX-metatietoja (poislukien tiivistelmät) saa vapaasti uudelleenkäyttää CC0-lisenssillä.