0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
Cecchetto, M., Alia, R. G., Wrobel, F., Coronetti, A., Bilko, K., Lucsanyi, D., Fiore, S., Bazzano, G., Pirovano, E., & Nolte, R. (2021). 0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments. IEEE Transactions on Nuclear Science, 68(5), 873-883. https://doi.org/10.1109/TNS.2021.3064666
Published inIEEE Transactions on Nuclear Science
© Authors, 2021
Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs manufactured in scaled technologies, with respect to high-energy neutrons. Their contribution is evaluated in accelerator, ground level and avionic (12 km of altitude) environments. Experimental cross sections were measured with monoenergetic neutrons from 144 keV to 17 MeV, and results benchmarked with Monte Carlo simulations. It was found that even 144 keV neutrons can induce upsets due to elastic scattering. Moreover, neutrons in the 0.1-10 MeV energy range can induce more than 60% of the overall upset rate in accelerator applications, while their contribution can exceed 18% in avionics. The SER due to neutrons below 3 MeV, whose contribution has always been considered negligible, is found to be up to 44% of the total upsets in accelerator environments. These results have strong Radiation Hardness Assurance (RHA) implications for those environments with high fluxes of neutrons in the 0.1-10 MeV energy range. ...
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Publication in research information system
MetadataShow full item record
Related funder(s)European Commission
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about fundingThe KVI test campaign has received funding from the European Union’s Horizon 2020 research and innovation programme under the MSC agreement no. 721624.
Showing items with similar title or keywords.
Söderström, Daniel; Matana Luza, Lucas; Kettunen, Heikki; Javanainen, Arto; Farabolini, Wilfrid; Gilardi, Antonio; Coronetti, Andrea; Poivey, Christian; Dilillo, Luigi (Institute of Electrical and Electronics Engineers (IEEE), 2021)This study investigates the response of synchronous dynamic random access memories to energetic electrons, and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with ...
Coronetti, Andrea; Alía, Rubén García; Cecchetto, Matteo; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigné, Frédéric (Institute of Electrical and Electronics Engineers, 2020)The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets ...
Matana Luza, Lucas; Söderström, Daniel; Pio de Mattos, Andre Martins; Bezerra, Eduardo Augusto; Cazzaniga, Carlo; Kastriotou, Maria; Poivey, Christian; Dilillo, Luigi (IEEE, 2021)This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under ...
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications Coronetti, Andrea; Garcìa Alìa, Rubén; Wang, Jialei; Tali, Maris; Cecchetto, Matteo; Cazzaniga, Carlo; Javanainen, Arto; Saigné, Frédéric; Leroux, Paul (IEEE, 2021)Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for ...
Matana, Luza Lucas; Söderström, Daniel; Puchner, Helmut; Alía, Rubén García; Letiche, Manon; Cazzaniga, Carlo; Bosio, Alberto; Dilillo, Luigi (Elsevier, 2022)The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a ...