Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Martinella, C., Alia, R. G., Stark, R., Coronetti, A., Cazzaniga, C., Kastriotou, M., Kadi, Y., Gaillard, R., Grossner, U., & Javanainen, A. (2021). Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies. IEEE Transactions on Nuclear Science, 68(5), 634-641. https://doi.org/10.1109/TNS.2021.3065122
Julkaistu sarjassa
IEEE Transactions on Nuclear ScienceTekijät
Kadi, Y. |
Päivämäärä
2021Tekijänoikeudet
© Authors, 2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.
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Institute of Electrical and Electronics Engineers (IEEE)ISSN Hae Julkaisufoorumista
0018-9499Asiasanat
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https://converis.jyu.fi/converis/portal/detail/Publication/51871055
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This work was supported by the European Space Agency ESA/ESTEC under Contract 4000124504/18/NL/KML/zk and by the European Union's Horizon 2020 research and innovation programme under the MSC grant agreement no. 721624.Lisenssi
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