Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Martinella, C., Alia, R. G., Stark, R., Coronetti, A., Cazzaniga, C., Kastriotou, M., Kadi, Y., Gaillard, R., Grossner, U., & Javanainen, A. (2021). Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies. IEEE Transactions on Nuclear Science, 68(5), 634-641. https://doi.org/10.1109/TNS.2021.3065122
Published inIEEE Transactions on Nuclear Science
Kadi, Y. |
© Authors, 2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Publication in research information system
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Related funder(s)European Commission
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about fundingThis work was supported by the European Space Agency ESA/ESTEC under Contract 4000124504/18/NL/KML/zk and by the European Union's Horizon 2020 research and innovation programme under the MSC grant agreement no. 721624.
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