Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Martinella, C., Alia, R. G., Stark, R., Coronetti, A., Cazzaniga, C., Kastriotou, M., Kadi, Y., Gaillard, R., Grossner, U., & Javanainen, A. (2021). Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies. IEEE Transactions on Nuclear Science, 68(5), 634-641. https://doi.org/10.1109/TNS.2021.3065122
Published in
IEEE Transactions on Nuclear ScienceAuthors
Kadi, Y. |
Date
2021Copyright
© Authors, 2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)ISSN Search the Publication Forum
0018-9499Keywords
Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/51871055
Metadata
Show full item recordCollections
Related funder(s)
European CommissionFunding program(s)
Others
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about funding
This work was supported by the European Space Agency ESA/ESTEC under Contract 4000124504/18/NL/KML/zk and by the European Union's Horizon 2020 research and innovation programme under the MSC grant agreement no. 721624.License
Related items
Showing items with similar title or keywords.
-
Single-Event Burnout Mechanisms in SiC Power MOSFETs
Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear ... -
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ... -
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
Johnson, R. A.; Witulski, A. F.; Ball, D. R.; Galloway, K. F.; Sternberg, A. L.; Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; Raman, A.; Chakraborty, P. S.; Arslanbekov, R. R. (IEEE, 2020)The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated ... -
Failure Estimates for SiC Power MOSFETs in Space Electronics
Galloway, Kenneth F.; Witulski, Arthur F.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Ball, Dennis R.; Javanainen, Arto; Reed, Robert A.; Sierawski, Brian D.; Lauenstein, Jean-Marie (MDPI, 2018)Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often ... -
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...