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dc.contributor.authorNiskanen, Kimmo
dc.contributor.authorKettunen, Heikki
dc.contributor.authorLahti, Mikko
dc.contributor.authorRossi, Mikko
dc.contributor.authorJaatinen, Jukka
dc.contributor.authorSöderström, Daniel
dc.contributor.authorJavanainen, Arto
dc.date.accessioned2023-02-08T09:34:56Z
dc.date.available2023-02-08T09:34:56Z
dc.date.issued2023
dc.identifier.citationNiskanen, K., Kettunen, H., Lahti, M., Rossi, M., Jaatinen, J., Söderström, D., & Javanainen, A. (2023). Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs. <i>IEEE Transactions on Nuclear Science</i>, <i>70</i>(4), 456-461. <a href="https://doi.org/10.1109/tns.2023.3242335" target="_blank">https://doi.org/10.1109/tns.2023.3242335</a>
dc.identifier.otherCONVID_176805188
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/85400
dc.description.abstractThe effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour.en
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.rightsCC BY 4.0
dc.subject.otherlogic gates
dc.subject.othersilicon carbide
dc.subject.otherstress
dc.subject.otherelectric breakdown
dc.subject.otherradiation effects
dc.subject.otherMOSFET
dc.subject.otherdegradation
dc.titleEffect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202302081679
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange456-461
dc.relation.issn0018-9499
dc.relation.numberinseries4
dc.relation.volume70
dc.type.versionpublishedVersion
dc.rights.copyright© Authors 2023
dc.rights.accesslevelopenAccessfi
dc.subject.ysotransistorit
dc.subject.ysoelektronit
dc.subject.ysoelektroniikkakomponentit
dc.subject.ysosäteilyfysiikka
dc.subject.ysoionisoiva säteily
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p16104
jyx.subject.urihttp://www.yso.fi/onto/yso/p4030
jyx.subject.urihttp://www.yso.fi/onto/yso/p9652
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p459
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.1109/tns.2023.3242335
dc.type.okmA1


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