Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R., Galloway, K.F., Johnson, R.A., Alles, M.L., Sternberg, A.L., Sierawski, B.D., Witulski, A.F., Reed, R.A., Schrimpf, R.D., Hutson, J.M., Javanainen, A., & Lauenstein, J-M. (2020). Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes. IEEE Transactions on Nuclear Science, 67(1), 22-28. https://doi.org/10.1109/TNS.2019.2955922
Published inIEEE Transactions on Nuclear Science
© 2019 IEEE
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.
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Additional information about fundingThis work was supported in part by the National Aeronautics and Space Administration (NASA) Early Stage Innovation (ESI) Program under Grant NNX17AD09G, in part by the NASA Goddard through the NASA Electronic Parts and Packaging Program (NEPP), in part by the University of Jyväskylä through the European Space Agency/European Space Research and Technology Centre (ESA/ESTEC) Program under Contract 4000111630/14/NL/PA, and in part by the Academy of Finland under Project 2513553. ...
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