Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D., Galloway, K., Johnson, R., Alles, M., Sternberg, A., Sierawski, B., Witulski, A., Reed, R., Schrimpf, R., Hutson, J., Javanainen, A., & Lauenstein, J.-M. (2020). Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes. IEEE Transactions on Nuclear Science, 67(1), 22-28. https://doi.org/10.1109/TNS.2019.2955922
Published inIEEE Transactions on Nuclear Science
© 2019 IEEE
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.
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Additional information about fundingThis work was supported in part by the National Aeronautics and Space Administration (NASA) Early Stage Innovation (ESI) Program under Grant NNX17AD09G, in part by the NASA Goddard through the NASA Electronic Parts and Packaging Program (NEPP), in part by the University of Jyväskylä through the European Space Agency/European Space Research and Technology Centre (ESA/ESTEC) Program under Contract 4000111630/14/NL/PA, and in part by the Academy of Finland under Project 2513553. ...
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Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear ...
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes Johnson, R. A.; Witulski, A. F.; Ball, D. R.; Galloway, K. F.; Sternberg, A. L.; Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; Raman, A.; Chakraborty, P. S.; Arslanbekov, R. R. (IEEE, 2020)The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated ...
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...
Witulski, A. F.; Arslanbekov, R.; Raman, A.; Schrimpf, R. D.; Sternberg, A.; Galloway, K. F.; Javanainen, Arto; Grider, D.; Lichtenwalner, D. J.; Hull, B. (Institute of Electrical and Electronics Engineers, 2018)Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current ...
Martinella, C.; Ziemann, T.; Stark, R.; Tsibizov, A.; Voss, K. O.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, A. (IEEE, 2020)Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial SiC VD-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage ...