Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R., Galloway, K.F., Johnson, R.A., Alles, M.L., Sternberg, A.L., Sierawski, B.D., Witulski, A.F., Reed, R.A., Schrimpf, R.D., Hutson, J.M., Javanainen, A., & Lauenstein, J-M. (2020). Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes. IEEE Transactions on Nuclear Science, 67(1), 22-28. https://doi.org/10.1109/TNS.2019.2955922
Julkaistu sarjassa
IEEE Transactions on Nuclear ScienceTekijät
Päivämäärä
2020Tekijänoikeudet
© 2019 IEEE
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.
Julkaisija
IEEEISSN Hae Julkaisufoorumista
0018-9499Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/33670031
Metadata
Näytä kaikki kuvailutiedotKokoelmat
Lisätietoja rahoituksesta
This work was supported in part by the National Aeronautics and Space Administration (NASA) Early Stage Innovation (ESI) Program under Grant NNX17AD09G, in part by the NASA Goddard through the NASA Electronic Parts and Packaging Program (NEPP), in part by the University of Jyväskylä through the European Space Agency/European Space Research and Technology Centre (ESA/ESTEC) Program under Contract 4000111630/14/NL/PA, and in part by the Academy of Finland under Project 2513553. ...Lisenssi
Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
-
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation
Roed, Ketil; Eriksen, Dag Oistein; Ceccaroli, Bruno; Martinella, Corinna; Javanainen, Arto; Reshanov, Sergey; Massetti, Silvia (Institute of Electrical and Electronics Engineers (IEEE), 2022)The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as ... -
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Witulski, A. F.; Arslanbekov, R.; Raman, A.; Schrimpf, R. D.; Sternberg, A.; Galloway, K. F.; Javanainen, Arto; Grider, D.; Lichtenwalner, D. J.; Hull, B. (Institute of Electrical and Electronics Engineers, 2018)Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current ... -
Single-Event Burnout Mechanisms in SiC Power MOSFETs
Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear ... -
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ... -
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
Ball, D. R.; Sierawski, B. D.; Galloway, K. F.; Johnson, R. A.; Alles, M. L.; Sternberg, A. L.; Witulski, A. F.; Reed, R. A.; Schrimpf, R. D.; Javanainen, Arto; Lauenstein, J-M. (IEEE, 2019)Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction ...
Ellei toisin mainittu, julkisesti saatavilla olevia JYX-metatietoja (poislukien tiivistelmät) saa vapaasti uudelleenkäyttää CC0-lisenssillä.