Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET

Niskanen, Kimmo; Kettunen, Heikki; Söderström, Daniel; Rossi, Mikko; Jaatinen, Jukka; Javanainen, Arto

doi:10.1109/tns.2023.3242829

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Niskanen, K., Kettunen, H., Söderström, D., Rossi, M., Jaatinen, J., & Javanainen, A. (2023). Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET. IEEE Transactions on Nuclear Science, 70(8), 1838-1843. https://doi.org/10.1109/tns.2023.3242829

Julkaistu sarjassa

IEEE Transactions on Nuclear Science

Tekijät

Niskanen, Kimmo |

Kettunen, Heikki |

Söderström, Daniel |

Rossi, Mikko |

Jaatinen, Jukka |

Javanainen, Arto

Päivämäärä

2023

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit.

Julkaisija

Institute of Electrical and Electronics Engineers (IEEE)

ISSN Hae Julkaisufoorumista

0018-9499

Lisätietoja rahoituksesta

European Space Agency (Grant Number: 124504/18/NL/KML/zk)

Lisenssi

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