Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Martinella, C., Stark, R., Ziemann, T., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2019). Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs. IEEE Transactions on Nuclear Science, 66(7), 1702-1709. https://doi.org/10.1109/TNS.2019.2907669
Published inIEEE Transactions on Nuclear Science
Kadi, Y. |
© 2018 IEEE.
High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path forms between drain and gate, while at higher bias the heavy ion induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.
PublisherInstitute of Electrical and Electronics Engineers
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Additional information about fundingETH Zurich Foundation; 10.13039/501100000844-European Space Agency;
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