Single-Event Burnout Mechanisms in SiC Power MOSFETs

Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D.

doi:10.1109/tns.2018.2849405

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Witulski, A. F., Ball, D. R., Galloway, K. F., Javanainen, A., Lauenstein, J.-M., Sternberg, A. L., & Schrimpf, R. D. (2018). Single-Event Burnout Mechanisms in SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 65(8), 1951-1955. https://doi.org/10.1109/tns.2018.2849405

Julkaistu sarjassa

IEEE Transactions on Nuclear Science

Tekijät

Witulski, Arthur F. |

Ball, Dennis R. |

Galloway, Kenneth F. |

Javanainen, Arto |

Lauenstein, Jean-Marie |

Sternberg, Andrew L. |

Schrimpf, Ronald D.

Päivämäärä

2018

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.

Julkaisija

Institute of Electrical and Electronics Engineers

ISSN Hae Julkaisufoorumista

0018-9499

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