Single-Event Burnout Mechanisms in SiC Power MOSFETs
Witulski, A. F., Ball, D. R., Galloway, K. F., Javanainen, A., Lauenstein, J.-M., Sternberg, A. L., & Schrimpf, R. D. (2018). Single-Event Burnout Mechanisms in SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 65(8), 1951-1955. https://doi.org/10.1109/tns.2018.2849405
Published inIEEE Transactions on Nuclear Science
© IEEE 2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.
PublisherInstitute of Electrical and Electronics Engineers
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Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...
Martinella, Corinna; Alia, R. G.; Stark, R.; Coronetti, Andrea; Cazzaniga, C.; Kastriotou, M.; Kadi, Y.; Gaillard, R.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2021)Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and ...
Martinella, C.; Natzke, P.; Alia, R.G.; Kadi, Y.; Niskanen, K.; Rossi, M.; Jaatinen, J.; Kettunen, H.; Tsibizov, A.; Grossner, U.; Javanainen, A. (Elsevier, 2022)The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to ...
Galloway, Kenneth F.; Witulski, Arthur F.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Ball, Dennis R.; Javanainen, Arto; Reed, Robert A.; Sierawski, Brian D.; Lauenstein, Jean-Marie (MDPI, 2018)Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often ...