Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study

Matana Luza, Lucas; Söderström, Daniel; Pio de Mattos, Andre Martins; Bezerra, Eduardo Augusto; Cazzaniga, Carlo; Kastriotou, Maria; Poivey, Christian; Dilillo, Luigi

doi:10.1109/DTIS53253.2021.9505143

dc.contributor.author	Matana Luza, Lucas
dc.contributor.author	Söderström, Daniel
dc.contributor.author	Pio de Mattos, Andre Martins
dc.contributor.author	Bezerra, Eduardo Augusto
dc.contributor.author	Cazzaniga, Carlo
dc.contributor.author	Kastriotou, Maria
dc.contributor.author	Poivey, Christian
dc.contributor.author	Dilillo, Luigi
dc.date.accessioned	2021-11-01T08:16:53Z
dc.date.available	2021-11-01T08:16:53Z
dc.date.issued	2021
dc.identifier.citation	Matana Luza, L., Söderström, D., Pio de Mattos, A. M., Bezerra, E. A., Cazzaniga, C., Kastriotou, M., Poivey, C., & Dilillo, L. (2021). Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study. In <i>DTIS 2021 : Proceedings of the 16th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era</i>. IEEE. <a href="https://doi.org/10.1109/DTIS53253.2021.9505143" target="_blank">https://doi.org/10.1109/DTIS53253.2021.9505143</a>
dc.identifier.other	CONVID_99331768
dc.identifier.uri	https://jyx.jyu.fi/handle/123456789/78438
dc.description.abstract	This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studied and characterized, presenting the occurrence of single-bit upsets and stuck bits. The cross sections for each type of event and technology node show that the 110 nm model is more sensitive to neutron-induced single-event effects than the other models.	en
dc.format.mimetype	application/pdf
dc.language.iso	eng
dc.publisher	IEEE
dc.relation.ispartof	DTIS 2021 : Proceedings of the 16th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era
dc.rights	In Copyright
dc.subject.other	Radiation Effects
dc.subject.other	SDRAM
dc.subject.other	SEE
dc.subject.other	Stuck Bits
dc.title	Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study
dc.type	conferenceObject
dc.identifier.urn	URN:NBN:fi:jyu-202111015465
dc.contributor.laitos	Fysiikan laitos	fi
dc.contributor.laitos	Department of Physics	en
dc.type.uri	http://purl.org/eprint/type/ConferencePaper
dc.relation.isbn	978-1-6654-3655-7
dc.type.coar	http://purl.org/coar/resource_type/c_5794
dc.description.reviewstatus	peerReviewed
dc.type.version	acceptedVersion
dc.rights.copyright	© 2021 IEEE
dc.rights.accesslevel	openAccess	fi
dc.relation.conference	IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era
dc.relation.grantnumber	721624
dc.relation.grantnumber	721624
dc.relation.projectid	info:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA
dc.subject.yso	avaruustekniikka
dc.subject.yso	neutronit
dc.subject.yso	säteilyfysiikka
dc.subject.yso	käyttömuistit
dc.subject.yso	muistit (tietotekniikka)
dc.format.content	fulltext
jyx.subject.uri	http://www.yso.fi/onto/yso/p17376
jyx.subject.uri	http://www.yso.fi/onto/yso/p15394
jyx.subject.uri	http://www.yso.fi/onto/yso/p11069
jyx.subject.uri	http://www.yso.fi/onto/yso/p15250
jyx.subject.uri	http://www.yso.fi/onto/yso/p12658
dc.rights.url	http://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi	10.1109/DTIS53253.2021.9505143
dc.relation.funder	European Commission	en
dc.relation.funder	Euroopan komissio	fi
jyx.fundingprogram	MSCA Innovative Training Networks (ITN)	en
jyx.fundingprogram	MSCA Innovative Training Networks (ITN)	fi
jyx.fundinginformation	This study has been achieved thanks to the ﬁnancial support of the VAN ALLEN Foundation (Contract No. UM 181387), the Region Occitanie (Contract No. UM 181386), and from the European Union’s Horizon 2020 Research and Innovation Programme under the Grant Agreement No 721624 through the RADSAGA ITN.
dc.type.okm	A4

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Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study

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Samankaltainen aineisto

Neutron-induced effects on a self-refresh DRAM ﻿

Single-event effects of space and atmospheric radiation on memory components ﻿

Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications ﻿

0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments ﻿

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory ﻿

Neutron-induced effects on a self-refresh DRAM

Single-event effects of space and atmospheric radiation on memory components

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0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments

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