Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
Bosser, A., Gupta, V., Javanainen, A., Tsiligiannis, G., LaLumondiere, S. D., Brewe, D., Ferlet-Cavrois, V., Puchner, H., Kettunen, H., Gil, T., Wrobel, F., Saigné, F., Virtanen, A., & Dilillo, L. (2018). Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory. IEEE Transactions on Nuclear Science, 65(8), 1708-1714. https://doi.org/10.1109/TNS.2018.2797543
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IEEE Transactions on Nuclear ScienceAuthors
Gil, T. |
Date
2018Copyright
© 2018 IEEE
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
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Institute of Electrical and Electronics EngineersISSN Search the Publication Forum
0018-9499Keywords
Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/27873875
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