Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
Bosser, A., Gupta, V., Javanainen, A., Tsiligiannis, G., LaLumondiere, S. D., Brewe, D., Ferlet-Cavrois, V., Puchner, H., Kettunen, H., Gil, T., Wrobel, F., Saigné, F., Virtanen, A., & Dilillo, L. (2018). Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory. IEEE Transactions on Nuclear Science, 65(8), 1708-1714. https://doi.org/10.1109/TNS.2018.2797543
Julkaistu sarjassa
IEEE Transactions on Nuclear SciencePäivämäärä
2018Tekijänoikeudet
© 2018 IEEE
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
Julkaisija
Institute of Electrical and Electronics EngineersISSN Hae Julkaisufoorumista
0018-9499Asiasanat
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https://converis.jyu.fi/converis/portal/detail/Publication/27873875
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