Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., . . . Lauenstein, J.-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 66 (1), 337-343. doi:10.1109/TNS.2018.2885734
Published inIEEE Transactions on Nuclear Science
© 2018 IEEE
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
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Martinella, Corinna; Alia, R. G.; Stark, R.; Coronetti, Andrea; Cazzaniga, C.; Kastriotou, M.; Kadi, Y.; Gaillard, R.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2021)Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and ...
Galloway, Kenneth F.; Witulski, Arthur F.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Ball, Dennis R.; Javanainen, Arto; Reed, Robert A.; Sierawski, Brian D.; Lauenstein, Jean-Marie (MDPI, 2018)Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often ...
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...
Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear ...
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...