Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., . . . Lauenstein, J.-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 66 (1), 337-343. doi:10.1109/TNS.2018.2885734
Published inIEEE Transactions on Nuclear Science
© 2018 IEEE
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.