Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
Abstract
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
Main Authors
Format
Articles
Research article
Published
2019
Series
Subjects
Publication in research information system
Publisher
IEEE
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-201912135275Use this for linking
Review status
Peer reviewed
ISSN
0018-9499
DOI
https://doi.org/10.1109/TNS.2018.2885734
Language
English
Published in
IEEE Transactions on Nuclear Science
Citation
- Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., & Lauenstein, J-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 66(1), 337-343. https://doi.org/10.1109/TNS.2018.2885734
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Copyright© 2018 IEEE