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dc.contributor.authorBall, D. R.
dc.contributor.authorSierawski, B. D.
dc.contributor.authorGalloway, K. F.
dc.contributor.authorJohnson, R. A.
dc.contributor.authorAlles, M. L.
dc.contributor.authorSternberg, A. L.
dc.contributor.authorWitulski, A. F.
dc.contributor.authorReed, R. A.
dc.contributor.authorSchrimpf, R. D.
dc.contributor.authorJavanainen, Arto
dc.contributor.authorLauenstein, J-M.
dc.date.accessioned2019-12-17T13:17:00Z
dc.date.available2019-12-17T13:17:00Z
dc.date.issued2019
dc.identifier.citationBall, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., & Lauenstein, J-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. <i>IEEE Transactions on Nuclear Science</i>, <i>66</i>(1), 337-343. <a href="https://doi.org/10.1109/TNS.2018.2885734" target="_blank">https://doi.org/10.1109/TNS.2018.2885734</a>
dc.identifier.otherCONVID_28818479
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/66882
dc.description.abstractCross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.fi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.rightsIn Copyright
dc.subject.othersilicon carbide
dc.subject.otherSiC
dc.subject.otherpower
dc.subject.otherMOSFET
dc.subject.otherheavy ion
dc.subject.otherneutron
dc.subject.othercross-section
dc.subject.otherfailure in time
dc.subject.otherFIT
dc.subject.othersingle event burnout
dc.subject.otherSEB
dc.subject.otherMonte Carlo
dc.subject.otherMRED
dc.titleEstimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
dc.typeresearch article
dc.identifier.urnURN:NBN:fi:jyu-201912135275
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2019-12-13T13:15:05Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange337-343
dc.relation.issn0018-9499
dc.relation.numberinseries1
dc.relation.volume66
dc.type.versionacceptedVersion
dc.rights.copyright© 2018 IEEE
dc.rights.accesslevelopenAccessfi
dc.type.publicationarticle
dc.subject.ysosäteilyfysiikka
dc.subject.ysotransistorit
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p16104
dc.rights.urlhttp://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi10.1109/TNS.2018.2885734
dc.type.okmA1


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