Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Ball, D. R.; Sierawski, B. D.; Galloway, K. F.; Johnson, R. A.; Alles, M. L.; Sternberg, A. L.; Witulski, A. F.; Reed, R. A.; Schrimpf, R. D.; Javanainen, Arto; Lauenstein, J-M.

doi:10.1109/TNS.2018.2885734

Final Draft

Katso/Avaa

1.6 Mb

Lataukset:

Show download details Hide download details

Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., & Lauenstein, J-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 66(1), 337-343. https://doi.org/10.1109/TNS.2018.2885734

Julkaistu sarjassa

IEEE Transactions on Nuclear Science

Tekijät

Ball, D. R. |

Sierawski, B. D. |

Galloway, K. F. |

Johnson, R. A. |

Alles, M. L. |

Sternberg, A. L. |

Witulski, A. F. |

Reed, R. A. |

Schrimpf, R. D. |

Javanainen, Arto |

Lauenstein, J-M.

Päivämäärä

2019

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.

Julkaisija

IEEE

ISSN Hae Julkaisufoorumista

0018-9499

Lisenssi

Ellei muuten mainita, aineiston lisenssi on in Copyright

Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Martinella, Corinna; Alia, R. G.; Stark, R.; Coronetti, Andrea; Cazzaniga, C.; Kastriotou, M.; Kadi, Y.; Gaillard, R.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2021)

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and ...
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)

Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...
Failure Estimates for SiC Power MOSFETs in Space Electronics

Galloway, Kenneth F.; Witulski, Arthur F.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Ball, Dennis R.; Javanainen, Arto; Reed, Robert A.; Sierawski, Brian D.; Lauenstein, Jean-Marie (MDPI, 2018)

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often ...
Single-Event Burnout Mechanisms in SiC Power MOSFETs

Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Javanainen, Arto; Lauenstein, Jean-Marie; Sternberg, Andrew L.; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear ...
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Witulski, A. F.; Arslanbekov, R.; Raman, A.; Schrimpf, R. D.; Sternberg, A.; Galloway, K. F.; Javanainen, Arto; Grider, D.; Lichtenwalner, D. J.; Hull, B. (Institute of Electrical and Electronics Engineers, 2018)

Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current ...