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Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

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Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., & Hull, B. (2018). Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. IEEE Transactions on Nuclear Science, 65(1), 256-261. https://doi.org/10.1109/TNS.2017.2782227
Published in
IEEE Transactions on Nuclear Science
Authors
Witulski, A. F. |
Arslanbekov, R. |
Raman, A. |
Schrimpf, R. D. |
Sternberg, A. |
Galloway, K. F. |
Javanainen, Arto |
Grider, D. |
Lichtenwalner, D. J. |
Hull, B.
Date
2018
Copyright
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

 
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon carbide lattice.
Publisher
Institute of Electrical and Electronics Engineers
ISSN Search the Publication Forum
0018-9499
Keywords
single event effects heavy ions silicon carbide power diodes junction barrier schottky (JBS) diode single-event burnout thermal coefficients of silicon carbide
DOI
https://doi.org/10.1109/TNS.2017.2782227
URI

http://urn.fi/URN:NBN:fi:jyu-201801251329

Publication in research information system

https://converis.jyu.fi/converis/portal/detail/Publication/27817017

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