Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., & Hull, B. (2018). Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. IEEE Transactions on Nuclear Science, 65(1), 256-261. https://doi.org/10.1109/TNS.2017.2782227
Julkaistu sarjassa
IEEE Transactions on Nuclear SciencePäivämäärä
2018Tekijänoikeudet
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Ion-induced degradation and catastrophic failures in
high-voltage SiC Junction Barrier Schottky (JBS) power diodes
are investigated. Experimental results agree with earlier data
showing discrete jumps in leakage current for individual ions,
and show that the boundary between leakage current
degradation and a single-event-burnout-like effect is a strong
function of LET and reverse bias. TCAD simulations show high
localized electric fields under the Schottky junction, and high
temperatures generated directly under the Schottky contact,
consistent with the hypothesis that the ion energy causes
eutectic-like intermixture at the metal- semiconductor interface
or localized melting of the silicon carbide lattice.
Julkaisija
Institute of Electrical and Electronics EngineersISSN Hae Julkaisufoorumista
0018-9499Asiasanat
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https://converis.jyu.fi/converis/portal/detail/Publication/27817017