Single-Event Burnout Mechanisms in SiC Power MOSFETs
Witulski, A. F., Ball, D. R., Galloway, K. F., Javanainen, A., Lauenstein, J.-M., Sternberg, A. L., & Schrimpf, R. D. (2018). Single-Event Burnout Mechanisms in SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 65(8), 1951-1955. https://doi.org/10.1109/tns.2018.2849405
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IEEE Transactions on Nuclear ScienceDate
2018Copyright
© IEEE 2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.
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Institute of Electrical and Electronics EngineersISSN Search the Publication Forum
0018-9499Keywords
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