Single-Event Burnout Mechanisms in SiC Power MOSFETs
| dc.contributor.author | Witulski, Arthur F. | |
| dc.contributor.author | Ball, Dennis R. | |
| dc.contributor.author | Galloway, Kenneth F. | |
| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Lauenstein, Jean-Marie | |
| dc.contributor.author | Sternberg, Andrew L. | |
| dc.contributor.author | Schrimpf, Ronald D. | |
| dc.date.accessioned | 2018-08-22T10:52:55Z | |
| dc.date.available | 2020-06-22T21:35:09Z | |
| dc.date.issued | 2018 | |
| dc.identifier.citation | Witulski, A. F., Ball, D. R., Galloway, K. F., Javanainen, A., Lauenstein, J.-M., Sternberg, A. L., & Schrimpf, R. D. (2018). Single-Event Burnout Mechanisms in SiC Power MOSFETs. <i>IEEE Transactions on Nuclear Science</i>, <i>65</i>(8), 1951-1955. <a href="https://doi.org/10.1109/tns.2018.2849405" target="_blank">https://doi.org/10.1109/tns.2018.2849405</a> | |
| dc.identifier.other | CONVID_28132159 | |
| dc.identifier.other | TUTKAID_78088 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/59310 | |
| dc.description.abstract | Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. | fi |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers | |
| dc.relation.ispartofseries | IEEE Transactions on Nuclear Science | |
| dc.rights | In Copyright | |
| dc.subject.other | single event effects | |
| dc.subject.other | heavy ions | |
| dc.subject.other | silicon carbide | |
| dc.subject.other | single-event burnout | |
| dc.subject.other | power devices | |
| dc.subject.other | power MOSFETs | |
| dc.subject.other | device simulations | |
| dc.title | Single-Event Burnout Mechanisms in SiC Power MOSFETs | |
| dc.type | article | |
| dc.identifier.urn | URN:NBN:fi:jyu-201808203870 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.date.updated | 2018-08-20T09:15:18Z | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 1951-1955 | |
| dc.relation.issn | 0018-9499 | |
| dc.relation.numberinseries | 8 | |
| dc.relation.volume | 65 | |
| dc.type.version | acceptedVersion | |
| dc.rights.copyright | © IEEE 2018 | |
| dc.rights.accesslevel | openAccess | fi |
| dc.subject.yso | säteilyfysiikka | |
| dc.subject.yso | ionisoiva säteily | |
| dc.subject.yso | elektroniikkakomponentit | |
| dc.subject.yso | transistorit | |
| dc.format.content | fulltext | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p11069 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p459 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p9652 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p16104 | |
| dc.rights.url | http://rightsstatements.org/page/InC/1.0/?language=en | |
| dc.relation.doi | 10.1109/tns.2018.2849405 | |
| dc.type.okm | A1 |
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