Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Abstract
Ion-induced degradation and catastrophic failures in
high-voltage SiC Junction Barrier Schottky (JBS) power diodes
are investigated. Experimental results agree with earlier data
showing discrete jumps in leakage current for individual ions,
and show that the boundary between leakage current
degradation and a single-event-burnout-like effect is a strong
function of LET and reverse bias. TCAD simulations show high
localized electric fields under the Schottky junction, and high
temperatures generated directly under the Schottky contact,
consistent with the hypothesis that the ion energy causes
eutectic-like intermixture at the metal- semiconductor interface
or localized melting of the silicon carbide lattice.
Main Authors
Format
Articles
Research article
Published
2018
Series
Subjects
Publication in research information system
Publisher
Institute of Electrical and Electronics Engineers
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-201801251329Use this for linking
Review status
Peer reviewed
ISSN
0018-9499
DOI
https://doi.org/10.1109/TNS.2017.2782227
Language
English
Published in
IEEE Transactions on Nuclear Science
Citation
- Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., & Hull, B. (2018). Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. IEEE Transactions on Nuclear Science, 65(1), 256-261. https://doi.org/10.1109/TNS.2017.2782227
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