Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., & Hull, B. (2018). Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. IEEE Transactions on Nuclear Science, 65(1), 256-261. https://doi.org/10.1109/TNS.2017.2782227
Published in
IEEE Transactions on Nuclear ScienceDate
2018Copyright
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Ion-induced degradation and catastrophic failures in
high-voltage SiC Junction Barrier Schottky (JBS) power diodes
are investigated. Experimental results agree with earlier data
showing discrete jumps in leakage current for individual ions,
and show that the boundary between leakage current
degradation and a single-event-burnout-like effect is a strong
function of LET and reverse bias. TCAD simulations show high
localized electric fields under the Schottky junction, and high
temperatures generated directly under the Schottky contact,
consistent with the hypothesis that the ion energy causes
eutectic-like intermixture at the metal- semiconductor interface
or localized melting of the silicon carbide lattice.
Publisher
Institute of Electrical and Electronics EngineersISSN Search the Publication Forum
0018-9499Keywords
Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/27817017