Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, J. M., Lauenstein, J. M., Javanainen, A., Raman, A., Chakraborty, P. S., & Arslanbekov, R.R. (2020). Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes. IEEE Transactions on Nuclear Science, 67(1), 135-139. https://doi.org/10.1109/TNS.2019.2947866
Published inIEEE Transactions on Nuclear Science
© 2019 IEEE.
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.