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dc.contributor.authorWitulski, A. F.
dc.contributor.authorArslanbekov, R.
dc.contributor.authorRaman, A.
dc.contributor.authorSchrimpf, R. D.
dc.contributor.authorSternberg, A.
dc.contributor.authorGalloway, K. F.
dc.contributor.authorJavanainen, Arto
dc.contributor.authorGrider, D.
dc.contributor.authorLichtenwalner, D. J.
dc.contributor.authorHull, B.
dc.date.accessioned2018-01-26T08:17:48Z
dc.date.available2018-01-26T08:17:48Z
dc.date.issued2018
dc.identifier.citationWitulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., & Hull, B. (2018). Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. <i>IEEE Transactions on Nuclear Science</i>, <i>65</i>(1), 256-261. <a href="https://doi.org/10.1109/TNS.2017.2782227" target="_blank">https://doi.org/10.1109/TNS.2017.2782227</a>
dc.identifier.otherCONVID_27817017
dc.identifier.otherTUTKAID_76357
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/56909
dc.description.abstractIon-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon carbide lattice.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.subject.othersingle event effects
dc.subject.otherheavy ions
dc.subject.othersilicon carbide
dc.subject.otherpower diodes
dc.subject.otherjunction barrier schottky (JBS) diode
dc.subject.othersingle-event burnout
dc.subject.otherthermal coefficients of silicon carbide
dc.titleSingle Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201801251329
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2018-01-25T07:15:04Z
dc.type.coarjournal article
dc.description.reviewstatuspeerReviewed
dc.format.pagerange256-261
dc.relation.issn0018-9499
dc.relation.numberinseries1
dc.relation.volume65
dc.type.versionacceptedVersion
dc.rights.copyright© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.rights.accesslevelopenAccessfi
dc.relation.doi10.1109/TNS.2017.2782227


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