Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

Javanainen, Arto; Turowski, Marek; Galloway, Kenneth F.; Nicklaw, Christopher; Ferlet-Cavrois, Véronique; Bosser, Alexandre; Lauenstein, Jean-Marie; Muschitiello, Michele; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari

doi:10.1109/TNS.2017.2717045

dc.contributor.author	Javanainen, Arto
dc.contributor.author	Turowski, Marek
dc.contributor.author	Galloway, Kenneth F.
dc.contributor.author	Nicklaw, Christopher
dc.contributor.author	Ferlet-Cavrois, Véronique
dc.contributor.author	Bosser, Alexandre
dc.contributor.author	Lauenstein, Jean-Marie
dc.contributor.author	Muschitiello, Michele
dc.contributor.author	Pintacuda, Francesco
dc.contributor.author	Reed, Robert A.
dc.contributor.author	Schrimpf, Ronal D.
dc.contributor.author	Weller, Robert A.
dc.contributor.author	Virtanen, Ari
dc.date.accessioned	2017-08-30T09:59:36Z
dc.date.available	2017-08-30T09:59:36Z
dc.date.issued	2017
dc.identifier.citation	Javanainen, A., Turowski, M., Galloway, K. F., Nicklaw, C., Ferlet-Cavrois, V., Bosser, A., Lauenstein, J.-M., Muschitiello, M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence. <i>IEEE Transactions on Nuclear Science</i>, <i>64</i>(8), 2031-2037. <a href="https://doi.org/10.1109/TNS.2017.2717045" target="_blank">https://doi.org/10.1109/TNS.2017.2717045</a>
dc.identifier.other	CONVID_27080889
dc.identifier.other	TUTKAID_74224
dc.identifier.uri	https://jyx.jyu.fi/handle/123456789/55216
dc.description.abstract	Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartofseries	IEEE Transactions on Nuclear Science
dc.subject.other	ion radiation effects
dc.subject.other	modeling
dc.subject.other	power semiconductor devices
dc.subject.other	schottky diodes
dc.subject.other	silicon carbide
dc.title	Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
dc.type	article
dc.identifier.urn	URN:NBN:fi:jyu-201708243552
dc.contributor.laitos	Fysiikan laitos	fi
dc.contributor.laitos	Department of Physics	en
dc.contributor.oppiaine	Kiihdytinlaboratorio	fi
dc.contributor.oppiaine	Accelerator Laboratory	en
dc.type.uri	http://purl.org/eprint/type/JournalArticle
dc.date.updated	2017-08-24T09:15:04Z
dc.type.coar	http://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatus	peerReviewed
dc.format.pagerange	2031-2037
dc.relation.issn	0018-9499
dc.relation.numberinseries	8
dc.relation.volume	64
dc.type.version	acceptedVersion
dc.rights.copyright	© 2017 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevel	openAccess	fi
dc.subject.yso	ionit
dc.subject.yso	pii
dc.subject.yso	diodit
dc.subject.yso	säteily
dc.subject.yso	mallintaminen
jyx.subject.uri	http://www.yso.fi/onto/yso/p9015
jyx.subject.uri	http://www.yso.fi/onto/yso/p15609
jyx.subject.uri	http://www.yso.fi/onto/yso/p13006
jyx.subject.uri	http://www.yso.fi/onto/yso/p4150
jyx.subject.uri	http://www.yso.fi/onto/yso/p3533
dc.relation.doi	10.1109/TNS.2017.2717045
dc.type.okm	A1

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Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy ...
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The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as ...
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The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ...

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

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Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence ﻿

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation

Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs