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dc.contributor.authorJavanainen, Arto
dc.contributor.authorTurowski, Marek
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorNicklaw, Christopher
dc.contributor.authorFerlet-Cavrois, Véronique
dc.contributor.authorBosser, Alexandre
dc.contributor.authorLauenstein, Jean-Marie
dc.contributor.authorMuschitiello, Michele
dc.contributor.authorPintacuda, Francesco
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronal D.
dc.contributor.authorWeller, Robert A.
dc.contributor.authorVirtanen, Ari
dc.date.accessioned2017-08-30T09:59:36Z
dc.date.available2017-08-30T09:59:36Z
dc.date.issued2017
dc.identifier.citationJavanainen, A., Turowski, M., Galloway, K. F., Nicklaw, C., Ferlet-Cavrois, V., Bosser, A., . . . Virtanen, A. (2017). Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence. <em>IEEE Transactions on Nuclear Science</em>, 64 (8), 2031-2037. <a href="https://doi.org/10.1109/TNS.2017.2717045">doi:10.1109/TNS.2017.2717045</a>
dc.identifier.otherTUTKAID_74224
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/55216
dc.description.abstractHeavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.subject.otherion radiation effects
dc.subject.othermodeling
dc.subject.otherpower semiconductor devices
dc.subject.otherschottky diodes
dc.subject.othersilicon carbide
dc.subject.otherions
dc.subject.othersilicon
dc.subject.otherdiodes
dc.subject.otherradiation
dc.subject.othermodelling (creation related to information)
dc.titleHeavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201708243552
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2017-08-24T09:15:04Z
dc.type.coarjournal article
dc.description.reviewstatuspeerReviewed
dc.format.pagerange2031-2037
dc.relation.issn0018-9499
dc.relation.volume64
dc.type.versionacceptedVersion
dc.rights.copyright© 2017 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.relation.doi10.1109/TNS.2017.2717045


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