Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. IEEE Transactions on Device and Materials Reliability, 18(3), 481-483. https://doi.org/10.1109/TDMR.2018.2842253
@ IEEE, 2018.
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation
PublisherInstitute of Electrical and Electronics Engineers
Publication in research information system
MetadataShow full item record
Showing items with similar title or keywords.
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence Javanainen, Arto; Turowski, Marek; Galloway, Kenneth F.; Nicklaw, Christopher; Ferlet-Cavrois, Véronique; Bosser, Alexandre; Lauenstein, Jean-Marie; Muschitiello, Michele; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages ...
Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy ...
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes Javanainen, Arto; Galloway, Kenneth F.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Schrimpf, Ronald D.; Reed, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2016)Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure ...
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...