Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D.

doi:10.1109/TDMR.2018.2842253

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Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. IEEE Transactions on Device and Materials Reliability, 18(3), 481-483. https://doi.org/10.1109/TDMR.2018.2842253

Julkaistu sarjassa

IEEE Transactions on Device and Materials Reliability

Tekijät

Javanainen, Arto |

Muinos, Henrique Vazquez |

Nordlund, Kai |

Galloway, Kenneth F. |

Turowski, Marek |

Schrimpf, Ronald D.

Päivämäärä

2018

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

@ IEEE, 2018.

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation

Julkaisija

Institute of Electrical and Electronics Engineers

ISSN Hae Julkaisufoorumista

1530-4388

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