Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D.

doi:10.1109/TDMR.2018.2842253

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Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. IEEE Transactions on Device and Materials Reliability, 18(3), 481-483. https://doi.org/10.1109/TDMR.2018.2842253

Julkaistu sarjassa

IEEE Transactions on Device and Materials Reliability

Tekijät

Javanainen, Arto |

Muinos, Henrique Vazquez |

Nordlund, Kai |

Galloway, Kenneth F. |

Turowski, Marek |

Schrimpf, Ronald D.

Päivämäärä

2018

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

@ IEEE, 2018.

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation

Julkaisija

Institute of Electrical and Electronics Engineers

ISSN Hae Julkaisufoorumista

1530-4388

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The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ...
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Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure ...