Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
Abstract
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Main Authors
Format
Articles
Research article
Published
2017
Series
Subjects
Publication in research information system
Publisher
Institute of Electrical and Electronics Engineers
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-201708243552Use this for linking
Review status
Peer reviewed
ISSN
0018-9499
DOI
https://doi.org/10.1109/TNS.2017.2717045
Language
English
Published in
IEEE Transactions on Nuclear Science
Citation
- Javanainen, A., Turowski, M., Galloway, K. F., Nicklaw, C., Ferlet-Cavrois, V., Bosser, A., Lauenstein, J.-M., Muschitiello, M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64(8), 2031-2037. https://doi.org/10.1109/TNS.2017.2717045
License
Copyright© 2017 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.