Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
Javanainen, A., Turowski, M., Galloway, K. F., Nicklaw, C., Ferlet-Cavrois, V., Bosser, A., . . . Virtanen, A. (2017). Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64 (8), 2031-2037. doi:10.1109/TNS.2017.2717045
Published inIEEE Transactions on Nuclear Science
© 2017 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
PublisherInstitute of Electrical and Electronics Engineers
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Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy ...
Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to ...
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes Javanainen, Arto; Galloway, Kenneth F.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Schrimpf, Ronald D.; Reed, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2016)Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure ...
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes Johnson, R. A.; Witulski, A. F.; Ball, D. R.; Galloway, K. F.; Sternberg, A. L.; Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; Raman, A.; Chakraborty, P. S.; Arslanbekov, R. R. (IEEE, 2020)The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated ...
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...