Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

Javanainen, Arto; Turowski, Marek; Galloway, Kenneth F.; Nicklaw, Christopher; Ferlet-Cavrois, Véronique; Bosser, Alexandre; Lauenstein, Jean-Marie; Muschitiello, Michele; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari

doi:10.1109/TNS.2017.2717045

Final Draft

Katso/Avaa

579.4 Kb

Lataukset:

Show download details Hide download details

Javanainen, A., Turowski, M., Galloway, K. F., Nicklaw, C., Ferlet-Cavrois, V., Bosser, A., Lauenstein, J.-M., Muschitiello, M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64(8), 2031-2037. https://doi.org/10.1109/TNS.2017.2717045

Julkaistu sarjassa

IEEE Transactions on Nuclear Science

Tekijät

Javanainen, Arto |

Turowski, Marek |

Galloway, Kenneth F. |

Nicklaw, Christopher |

Ferlet-Cavrois, Véronique |

Bosser, Alexandre |

Lauenstein, Jean-Marie |

Muschitiello, Michele |

Pintacuda, Francesco |

Reed, Robert A. |

Schrimpf, Ronal D. |

Weller, Robert A. |

Virtanen, Ari

Päivämäärä

2017

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Julkaisija

Institute of Electrical and Electronics Engineers

ISSN Hae Julkaisufoorumista

0018-9499

Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.

Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy ...
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to ...
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)

Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

Johnson, R. A.; Witulski, A. F.; Ball, D. R.; Galloway, K. F.; Sternberg, A. L.; Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; Raman, A.; Chakraborty, P. S.; Arslanbekov, R. R. (IEEE, 2020)

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated ...
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen, Arto; Galloway, Kenneth F.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Schrimpf, Ronald D.; Reed, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2016)

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure ...