Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
Javanainen, A., Galloway, K. F., Nicklaw, C., Bosser, A., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64(1), 415-420. https://doi.org/10.1109/TNS.2016.2616921
Published in
IEEE Transactions on Nuclear ScienceDate
2017Copyright
© 2016 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
Publisher
Institute of Electrical and Electronics EngineersISSN Search the Publication Forum
0018-9499Keywords
Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/26346092