Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari

doi:10.1109/TNS.2016.2616921

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Javanainen, A., Galloway, K. F., Nicklaw, C., Bosser, A., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64(1), 415-420. https://doi.org/10.1109/TNS.2016.2616921

Julkaistu sarjassa

IEEE Transactions on Nuclear Science

Tekijät

Javanainen, Arto |

Galloway, Kenneth F. |

Nicklaw, Christopher |

Bosser, Alexandre |

Ferlet-Cavrois, Véronique |

Lauenstein, Jean-Marie |

Pintacuda, Francesco |

Reed, Robert A. |

Schrimpf, Ronal D. |

Weller, Robert A. |

Virtanen, Ari

Päivämäärä

2017

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

Julkaisija

Institute of Electrical and Electronics Engineers

ISSN Hae Julkaisufoorumista

0018-9499

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The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated ...