Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
Javanainen, A., Galloway, K. F., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Schrimpf, R. D., Reed, R. A., & Virtanen, A. (2016). Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes. IEEE Transactions on Device and Materials Reliability, 16(2), 208-212. https://doi.org/10.1109/TDMR.2016.2557585
Julkaistu sarjassa
IEEE Transactions on Device and Materials ReliabilityPäivämäärä
2016Tekijänoikeudet
© 2016 IEEE. This is an author's final draft version of an article whose final and definitive form has been published in the conference proceeding by IEEE. Published in this repository with the kind permission of the publisher.
Under heavy-ion exposure at sufficiently high
reverse bias voltages silicon carbide (SiC) Schottky diodes are
observed to exhibit gradual increases in leakage current with
increasing ion fluence. Heavy-ion exposure alters the overall
reverse current-voltage characteristics of these diodes, leaving
the forward characteristics practically unchanged. This paper
discusses the charge transport mechanisms in the heavy-ion
damaged SiC Schottky diodes. A macro model, describing the
reverse current-voltage characteristics in the degraded SiC
Schottky diodes is proposed.
Julkaisija
Institute of Electrical and Electronics EngineersISSN Hae Julkaisufoorumista
1530-4388Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/26130177