Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
Javanainen, A., Galloway, K. F., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Schrimpf, R. D., . . . , & Virtanen, A. (2016). Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes. IEEE Transactions on Device and Materials Reliability, 16 (2), 208-212. doi:10.1109/TDMR.2016.2557585
© 2016 IEEE. This is an author's final draft version of an article whose final and definitive form has been published in the conference proceeding by IEEE. Published in this repository with the kind permission of the publisher.
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.