| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Galloway, Kenneth F. | |
| dc.contributor.author | Nicklaw, Christopher | |
| dc.contributor.author | Bosser, Alexandre | |
| dc.contributor.author | Ferlet-Cavrois, Véronique | |
| dc.contributor.author | Lauenstein, Jean-Marie | |
| dc.contributor.author | Pintacuda, Francesco | |
| dc.contributor.author | Reed, Robert A. | |
| dc.contributor.author | Schrimpf, Ronal D. | |
| dc.contributor.author | Weller, Robert A. | |
| dc.contributor.author | Virtanen, Ari | |
| dc.date.accessioned | 2017-03-08T08:39:36Z | |
| dc.date.available | 2017-03-08T08:39:36Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | Javanainen, A., Galloway, K. F., Nicklaw, C., Bosser, A., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence. <i>IEEE Transactions on Nuclear Science</i>, <i>64</i>(1), 415-420. <a href="https://doi.org/10.1109/TNS.2016.2616921" target="_blank">https://doi.org/10.1109/TNS.2016.2616921</a> | |
| dc.identifier.other | CONVID_26346092 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/53211 | |
| dc.description.abstract | Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. | |
| dc.language.iso | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers | |
| dc.relation.ispartofseries | IEEE Transactions on Nuclear Science | |
| dc.subject.other | current-voltage characteristics | |
| dc.subject.other | ion radiation effects | |
| dc.subject.other | modeling | |
| dc.subject.other | power semiconductor devices | |
| dc.subject.other | schottky diodes | |
| dc.subject.other | silicon carbide | |
| dc.title | Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence | |
| dc.type | research article | |
| dc.identifier.urn | URN:NBN:fi:jyu-201703031574 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.date.updated | 2017-03-03T13:15:07Z | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 415-420 | |
| dc.relation.issn | 0018-9499 | |
| dc.relation.numberinseries | 1 | |
| dc.relation.volume | 64 | |
| dc.type.version | acceptedVersion | |
| dc.rights.copyright | © 2016 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher. | |
| dc.rights.accesslevel | openAccess | fi |
| dc.type.publication | article | |
| dc.relation.doi | 10.1109/TNS.2016.2616921 | |
| dc.type.okm | A1 | |
