Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen, Arto; Galloway, Kenneth F.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Schrimpf, Ronald D.; Reed, Robert A.; Virtanen, Ari

doi:10.1109/TDMR.2016.2557585

dc.contributor.author	Javanainen, Arto
dc.contributor.author	Galloway, Kenneth F.
dc.contributor.author	Ferlet-Cavrois, Veronique
dc.contributor.author	Lauenstein, Jean-Marie
dc.contributor.author	Pintacuda, Francesco
dc.contributor.author	Schrimpf, Ronald D.
dc.contributor.author	Reed, Robert A.
dc.contributor.author	Virtanen, Ari
dc.date.accessioned	2016-11-11T09:29:31Z
dc.date.available	2016-11-11T09:29:31Z
dc.date.issued	2016
dc.identifier.citation	Javanainen, A., Galloway, K. F., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Schrimpf, R. D., Reed, R. A., & Virtanen, A. (2016). Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes. <i>IEEE Transactions on Device and Materials Reliability</i>, <i>16</i>(2), 208-212. <a href="https://doi.org/10.1109/TDMR.2016.2557585" target="_blank">https://doi.org/10.1109/TDMR.2016.2557585</a>
dc.identifier.other	CONVID_26130177
dc.identifier.uri	https://jyx.jyu.fi/handle/123456789/51865
dc.description.abstract	Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartofseries	IEEE Transactions on Device and Materials Reliability
dc.subject.other	current-voltage characteristics
dc.subject.other	ion radiation effects
dc.subject.other	modeling
dc.subject.other	power semiconductor devices
dc.subject.other	Schottky diodes
dc.subject.other	silicon carbide (SiC)
dc.title	Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
dc.type	research article
dc.identifier.urn	URN:NBN:fi:jyu-201611104608
dc.contributor.laitos	Fysiikan laitos	fi
dc.contributor.laitos	Department of Physics	en
dc.contributor.oppiaine	Kiihdytinlaboratorio	fi
dc.contributor.oppiaine	Accelerator Laboratory	en
dc.type.uri	http://purl.org/eprint/type/JournalArticle
dc.date.updated	2016-11-10T13:15:04Z
dc.type.coar	http://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatus	peerReviewed
dc.format.pagerange	208-212
dc.relation.issn	1530-4388
dc.relation.numberinseries	2
dc.relation.volume	16
dc.type.version	acceptedVersion
dc.rights.copyright	© 2016 IEEE. This is an author's final draft version of an article whose final and definitive form has been published in the conference proceeding by IEEE. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevel	openAccess	fi
dc.type.publication	article
dc.relation.doi	10.1109/TDMR.2016.2557585
dc.type.okm	A1

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Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

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