| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Galloway, Kenneth F. | |
| dc.contributor.author | Ferlet-Cavrois, Veronique | |
| dc.contributor.author | Lauenstein, Jean-Marie | |
| dc.contributor.author | Pintacuda, Francesco | |
| dc.contributor.author | Schrimpf, Ronald D. | |
| dc.contributor.author | Reed, Robert A. | |
| dc.contributor.author | Virtanen, Ari | |
| dc.date.accessioned | 2016-11-11T09:29:31Z | |
| dc.date.available | 2016-11-11T09:29:31Z | |
| dc.date.issued | 2016 | |
| dc.identifier.citation | Javanainen, A., Galloway, K. F., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Schrimpf, R. D., Reed, R. A., & Virtanen, A. (2016). Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes. <i>IEEE Transactions on Device and Materials Reliability</i>, <i>16</i>(2), 208-212. <a href="https://doi.org/10.1109/TDMR.2016.2557585" target="_blank">https://doi.org/10.1109/TDMR.2016.2557585</a> | |
| dc.identifier.other | CONVID_26130177 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/51865 | |
| dc.description.abstract | Under heavy-ion exposure at sufficiently high
reverse bias voltages silicon carbide (SiC) Schottky diodes are
observed to exhibit gradual increases in leakage current with
increasing ion fluence. Heavy-ion exposure alters the overall
reverse current-voltage characteristics of these diodes, leaving
the forward characteristics practically unchanged. This paper
discusses the charge transport mechanisms in the heavy-ion
damaged SiC Schottky diodes. A macro model, describing the
reverse current-voltage characteristics in the degraded SiC
Schottky diodes is proposed. | |
| dc.language.iso | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers | |
| dc.relation.ispartofseries | IEEE Transactions on Device and Materials Reliability | |
| dc.subject.other | current-voltage characteristics | |
| dc.subject.other | ion radiation effects | |
| dc.subject.other | modeling | |
| dc.subject.other | power semiconductor devices | |
| dc.subject.other | Schottky diodes | |
| dc.subject.other | silicon carbide (SiC) | |
| dc.title | Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes | |
| dc.type | research article | |
| dc.identifier.urn | URN:NBN:fi:jyu-201611104608 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.date.updated | 2016-11-10T13:15:04Z | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 208-212 | |
| dc.relation.issn | 1530-4388 | |
| dc.relation.numberinseries | 2 | |
| dc.relation.volume | 16 | |
| dc.type.version | acceptedVersion | |
| dc.rights.copyright | © 2016 IEEE. This is an author's final draft version of an article whose final and definitive form has been published in the conference proceeding by IEEE. Published in this repository with the kind permission of the publisher. | |
| dc.rights.accesslevel | openAccess | fi |
| dc.type.publication | article | |
| dc.relation.doi | 10.1109/TDMR.2016.2557585 | |
| dc.type.okm | A1 | |
