AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
Germanicus, R. C., Phulpin, T., Niskanen, K., Michez, A., & Lüders, U. (2024). AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs. Solid State Phenomena, 361, 85-91. https://doi.org/10.4028/p-hupmo0
Julkaistu sarjassa
Solid State PhenomenaPäivämäärä
2024Tekijänoikeudet
© 2024 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.
2024:12 | 2025:4
Due to the expansion of defects like single Shockley-type Stacking Faults inside the SiC epitaxial drift layer, during high current stress, classical SiC MOSFETs can be victims of the degradation of their electrical characteristics. The introduction of an epitaxial SiC buffer layer between the substrate and the n- drift epilayer, called recombination-enhancing buffer layer, was shown to avoid this degradation. In this paper, TCAD simulations of the electrical behavior of such a commercial SiC MOSFET device with varying buffer layer thickness are studied, indicating only small modifications of the electrical characteristics. These simulations are combined with the characterization of the local electrical properties using an AFM-sMIM technique, allowing to determine the real thickness of the different layers of the device. These measurements highlight an inhomogeneous conductivity in the SiC substrate, being probably compensated by the introduction of the SiC buffer layer.
Julkaisija
Trans Tech Publications, Ltd.ISSN Hae Julkaisufoorumista
1012-0394Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/233595274
Metadata
Näytä kaikki kuvailutiedotKokoelmat
Lisenssi
Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
-
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ... -
Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
Niskanen, Kimmo; Kettunen, Heikki; Söderström, Daniel; Rossi, Mikko; Jaatinen, Jukka; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) ... -
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments
Johnson, Robert A.; Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Sternberg, Andrew L.; Zhang, Enxia; Ryder, Landen D.; Reed, Robert A.; Schrimpf, Ronald D.; Kozub, John A.; Lauenstein, Jean-Marie; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)A two-photon absorption technique is used to understand the mechanisms of single-event effects in silicon carbide power MOSFETs and power junction barrier Schottky diodes. The MOSFETs and diodes have similar ... -
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
Niskanen, Kimmo; Kettunen, Heikki; Lahti, Mikko; Rossi, Mikko; Jaatinen, Jukka; Söderström, Daniel; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ... -
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...
Ellei toisin mainittu, julkisesti saatavilla olevia JYX-metatietoja (poislukien tiivistelmät) saa vapaasti uudelleenkäyttää CC0-lisenssillä.