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dc.contributor.authorGermanicus, Rosine Coq
dc.contributor.authorPhulpin, Tanguy
dc.contributor.authorNiskanen, Kimmo
dc.contributor.authorMichez, Alain
dc.contributor.authorLüders, Ulrike
dc.date.accessioned2024-08-28T09:08:43Z
dc.date.available2024-08-28T09:08:43Z
dc.date.issued2024
dc.identifier.citationGermanicus, R. C., Phulpin, T., Niskanen, K., Michez, A., & Lüders, U. (2024). AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs. <i>Solid State Phenomena</i>, <i>361</i>, 85-91. <a href="https://doi.org/10.4028/p-hupmo0" target="_blank">https://doi.org/10.4028/p-hupmo0</a>
dc.identifier.otherCONVID_233595274
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/96786
dc.description.abstractDue to the expansion of defects like single Shockley-type Stacking Faults inside the SiC epitaxial drift layer, during high current stress, classical SiC MOSFETs can be victims of the degradation of their electrical characteristics. The introduction of an epitaxial SiC buffer layer between the substrate and the n- drift epilayer, called recombination-enhancing buffer layer, was shown to avoid this degradation. In this paper, TCAD simulations of the electrical behavior of such a commercial SiC MOSFET device with varying buffer layer thickness are studied, indicating only small modifications of the electrical characteristics. These simulations are combined with the characterization of the local electrical properties using an AFM-sMIM technique, allowing to determine the real thickness of the different layers of the device. These measurements highlight an inhomogeneous conductivity in the SiC substrate, being probably compensated by the introduction of the SiC buffer layer.en
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherTrans Tech Publications, Ltd.
dc.relation.ispartofseriesSolid State Phenomena
dc.rightsCC BY 4.0
dc.subject.otherpower MOSFET
dc.subject.othersilicon carbide (SiC)
dc.subject.otherbipolar degradation
dc.subject.otherAFM
dc.subject.othersMIM
dc.titleAFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
dc.typeresearch article
dc.identifier.urnURN:NBN:fi:jyu-202408285672
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange85-91
dc.relation.issn1012-0394
dc.relation.volume361
dc.type.versionpublishedVersion
dc.rights.copyright© 2024 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.
dc.rights.accesslevelopenAccessfi
dc.type.publicationarticle
dc.format.contentfulltext
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.4028/p-hupmo0
dc.type.okmA1


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