Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Martinella, C., Bathen, M., Javanainen, A., & Grossner, U. (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum, 1090, 179-184. https://doi.org/10.4028/p-3y3lv4
Published in
Materials Science ForumDate
2023Copyright
© 2023 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
Publisher
Trans Tech PublicationsISSN Search the Publication Forum
0255-5476Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/183718040
Metadata
Show full item recordCollections
License
Except where otherwise noted, this item's license is described as CC BY 4.0