Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
| dc.contributor.author | Martinella, Corinna | |
| dc.contributor.author | Bathen, Marianne | |
| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Grossner, Ulrike | |
| dc.date.accessioned | 2023-07-06T12:16:51Z | |
| dc.date.available | 2023-07-06T12:16:51Z | |
| dc.date.issued | 2023 | |
| dc.identifier.citation | Martinella, C., Bathen, M., Javanainen, A., & Grossner, U. (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. <i>Materials Science Forum</i>, <i>1090</i>, 179-184. <a href="https://doi.org/10.4028/p-3y3lv4" target="_blank">https://doi.org/10.4028/p-3y3lv4</a> | |
| dc.identifier.other | CONVID_183718040 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/88279 | |
| dc.description.abstract | Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects. | en |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | |
| dc.publisher | Trans Tech Publications | |
| dc.relation.ispartofseries | Materials Science Forum | |
| dc.rights | CC BY 4.0 | |
| dc.title | Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs | |
| dc.type | research article | |
| dc.identifier.urn | URN:NBN:fi:jyu-202307064411 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 179-184 | |
| dc.relation.issn | 0255-5476 | |
| dc.relation.volume | 1090 | |
| dc.type.version | publishedVersion | |
| dc.rights.copyright | © 2023 The Author(s). Published by Trans Tech Publications Ltd, Switzerland. | |
| dc.rights.accesslevel | openAccess | fi |
| dc.type.publication | article | |
| dc.subject.yso | ionisoiva säteily | |
| dc.subject.yso | transistorit | |
| dc.subject.yso | elektroniikkakomponentit | |
| dc.subject.yso | säteilyfysiikka | |
| dc.subject.yso | puolijohteet | |
| dc.format.content | fulltext | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p459 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p16104 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p9652 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p11069 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p18256 | |
| dc.rights.url | https://creativecommons.org/licenses/by/4.0/ | |
| dc.relation.doi | 10.4028/p-3y3lv4 | |
| dc.type.okm | A1 |
Aineistoon kuuluvat tiedostot
Aineisto kuuluu seuraaviin kokoelmiin
Ellei muuten mainita, aineiston lisenssi on CC BY 4.0