Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Martinella, C., Bathen, M., Javanainen, A., & Grossner, U. (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum, 1090, 179-184. https://doi.org/10.4028/p-3y3lv4
Published inMaterials Science Forum
© 2023 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
PublisherTrans Tech Publications
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Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...
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