Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Martinella, Corinna; Bathen, Marianne; Javanainen, Arto; Grossner, Ulrike

doi:10.4028/p-3y3lv4

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Martinella, C., Bathen, M., Javanainen, A., & Grossner, U. (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum, 1090, 179-184. https://doi.org/10.4028/p-3y3lv4

Julkaistu sarjassa

Materials Science Forum

Tekijät

Martinella, Corinna |

Bathen, Marianne |

Javanainen, Arto |

Grossner, Ulrike

Päivämäärä

2023

Oppiaine

Kiihdytinlaboratorio Accelerator Laboratory

Tekijänoikeudet

Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.

Julkaisija

Trans Tech Publications

ISSN Hae Julkaisufoorumista

0255-5476

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