Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
| dc.contributor.author | Niskanen, Kimmo | |
| dc.contributor.author | Kettunen, Heikki | |
| dc.contributor.author | Söderström, Daniel | |
| dc.contributor.author | Rossi, Mikko | |
| dc.contributor.author | Jaatinen, Jukka | |
| dc.contributor.author | Javanainen, Arto | |
| dc.date.accessioned | 2023-02-09T08:28:31Z | |
| dc.date.available | 2023-02-09T08:28:31Z | |
| dc.date.issued | 2023 | |
| dc.identifier.citation | Niskanen, K., Kettunen, H., Söderström, D., Rossi, M., Jaatinen, J., & Javanainen, A. (2023). Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET. <i>IEEE Transactions on Nuclear Science</i>, <i>70</i>(8), 1838-1843. <a href="https://doi.org/10.1109/tns.2023.3242829" target="_blank">https://doi.org/10.1109/tns.2023.3242829</a> | |
| dc.identifier.other | CONVID_176845642 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/85417 | |
| dc.description.abstract | The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. | en |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
| dc.relation.ispartofseries | IEEE Transactions on Nuclear Science | |
| dc.rights | CC BY 4.0 | |
| dc.subject.other | logic gates | |
| dc.subject.other | radiation effects | |
| dc.subject.other | protons | |
| dc.subject.other | silicon carbide | |
| dc.subject.other | reliability | |
| dc.subject.other | stress | |
| dc.title | Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET | |
| dc.type | article | |
| dc.identifier.urn | URN:NBN:fi:jyu-202302091694 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 1838-1843 | |
| dc.relation.issn | 0018-9499 | |
| dc.relation.numberinseries | 8 | |
| dc.relation.volume | 70 | |
| dc.type.version | publishedVersion | |
| dc.rights.copyright | © Authors, 2023 | |
| dc.rights.accesslevel | openAccess | fi |
| dc.subject.yso | elektroniikkakomponentit | |
| dc.subject.yso | ionisoiva säteily | |
| dc.subject.yso | säteilyfysiikka | |
| dc.subject.yso | transistorit | |
| dc.subject.yso | protonit | |
| dc.format.content | fulltext | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p9652 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p459 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p11069 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p16104 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p12428 | |
| dc.rights.url | https://creativecommons.org/licenses/by/4.0/ | |
| dc.relation.doi | 10.1109/tns.2023.3242829 | |
| jyx.fundinginformation | European Space Agency (Grant Number: 124504/18/NL/KML/zk) | |
| dc.type.okm | A1 |
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