Evaluation of radiation stability of electron beam irradiated Nafion® and sulfonated poly(ether ether ketone) membranes
Pajuste, E., Reinholds, I., Vaivars, G., Antuzevičs, A., Avotiņa, L., Sprūģis, E., Rossi, M., Kettunen, H., Meri, R.M., & Kaparkalējs, R. (2022). Evaluation of radiation stability of electron beam irradiated Nafion® and sulfonated poly(ether ether ketone) membranes. Polymer Degradation and Stability, 200, Article 109970. https://doi.org/10.1016/j.polymdegradstab.2022.109970
Julkaistu sarjassa
Polymer Degradation and StabilityTekijät
Päivämäärä
2022Tekijänoikeudet
© 2022 The Authors. Published by Elsevier Ltd.
Proton exchange membranes (PEM), which have been commonly used in fuel cells have raised interest for the application in harsh environments involving ionizing radiation. Therefore, radiation stability and ability to sustain their functionality under the radiation environment are of great interest. Within this study, electron beam irradiation in dose range from 50 to 500kGy was used to evaluate the effects of radiation on the physico-chemical and mechanical properties of two types of PEM: commercial Nafion®117 and sulfonated poly(ether-ether-ketone) (SPEEK) with high degree of sulfonation (DS = 0.75±0.5).
SPEEK membrane presented higher mechanical and thermal stability compared to that of Nafion® at doses up to 250 kGy, which was evidenced by infrared and electron paramagnetic resonance spectroscopy, thermal analysis, ion chromatography methods. Tensile tests at room temperature and dynamical mechanical analysis of irradiated membranes revealed improved strength, storage modulus at room and elevated temperatures (80°C) for irradiated SPEEK as compared to pristine PEM. For comparison Nafion® exhibited notable deterioration of mechanical properties including elongation at break due to the predominant oxidation and chain scission already at doses exceeding 50 kGy. The study indicated that SPEEK could be perspective replacement of traditional PEM for application in fuel cells exposed to ionising radiation.
...
Julkaisija
Elsevier Ltd.ISSN Hae Julkaisufoorumista
0141-3910Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/150868026
Metadata
Näytä kaikki kuvailutiedotKokoelmat
Lisenssi
Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
-
Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
Niskanen, Kimmo; Kettunen, Heikki; Söderström, Daniel; Rossi, Mikko; Jaatinen, Jukka; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) ... -
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ... -
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
Söderström, Daniel; Matana Luza, Lucas; Kettunen, Heikki; Javanainen, Arto; Farabolini, Wilfrid; Gilardi, Antonio; Coronetti, Andrea; Poivey, Christian; Dilillo, Luigi (Institute of Electrical and Electronics Engineers (IEEE), 2021)This study investigates the response of synchronous dynamic random access memories to energetic electrons, and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with ... -
Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling
Lüdeke, Sascha; Cardenas, Gabriel Duran; Hajdas, Wojtek; Jaatinen, Jukka; Kettunen, Heikki; Poivey, Christian; Rossi, Mikko; Tanios, Bendy; Vogiatzi Stergiani, Marina; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were ... -
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions
Andreou, Charalambos M.; González-Castaño, Diego Miguel; Gerardin, Simone; Bagatin, Marta; Rodriguez, Faustino Gómez; Paccagnella, Alessandro; Prokofiev, Alexander V.; Javanainen, Arto; Virtanen, Ari; Liberali, Valentino; Calligaro, Cristiano; Nahmad, Daniel; Georgiou, Julius (MDPI AG, 2019)The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced ...
Ellei toisin mainittu, julkisesti saatavilla olevia JYX-metatietoja (poislukien tiivistelmät) saa vapaasti uudelleenkäyttää CC0-lisenssillä.