Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
Söderström, D., Matana Luza, L., Kettunen, H., Javanainen, A., Farabolini, W., Gilardi, A., Coronetti, A., Poivey, C., & Dilillo, L. (2021). Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment. IEEE Transactions on Nuclear Science, 68(5), 716-723. https://doi.org/10.1109/tns.2021.3068186
Published inIEEE Transactions on Nuclear Science
© IEEE, 2021
This study investigates the response of synchronous dynamic random access memories to energetic electrons, and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72 and 110 nm) were tested. Electrons with energies between 6 MeV and 200 MeV were used at RADEF in Jyväskylä, Finland, and at VESPER in CERN, Switzerland. Photon irradiation was also performed in Jyväskylä. In these irradiation tests, stuck bits originating from electron-induced single event effects were found, as well as single bit-flips from single electrons. To the best knowledge of the authors, this is the first time that stuck bits from single electron-events has been reported in the literature. It is argued in the paper that the single event bit-flips and stuck bits are caused by the same mechanism, large displacement damage clusters, and that they represent different amounts of damage to the memory cell. After a large particle fluence, a rapid increase in the error rate was observed, originating from the accumulation of smaller displacement damage clusters in the memory cells. The 110 nm memory was a candidate component to fly on the ESA JUICE mission, so the single event effect cross section as a function of electron energy was compared to the expected electron environment encountered by JUICE to estimate the error rates during the mission. ...
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Publication in research information system
MetadataShow full item record
Related funder(s)European Commission
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about fundingThe results presented here are part of the RADSAGA project that has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 721624. This work was also supported by the European Space Agency (ESA) under contract 4000124504/18/NL/KML/zk, the Van Allen Foundation under contract no. UM 181387, and Region Occitane under contract no. UM 181386. ...
Showing items with similar title or keywords.
Coronetti, Andrea; Cecchetto, Matteo; Wang, Jialei; Tali, Maris; Fernandez Martinez, Pablo; Kastriotou, Maria; Papadopoulou, Athina; Bilko, Kacper; Castellani, Florent; Sacristan, Mario; Garcia Alia, Ruben; Cazzaniga, Carlo; Morilla, Yolanda; Martin-Holgado, Pedro; Van Goethem, Marc-Jan; Kiewiet, Harry; Van Der Graaf, Emil; Brandenburg, Sytze; Hajdas, Wojtek; Sinkunaite, Laura; Marszalek, Miroslaw; Kettunen, Heikki; Rossi, Mikko; Jaatinen, Jukka; Javanainen, Arto; Moscatello, Marie-Helene; Dubois, Anthony; Fiore, Salvatore; Bazzano, Giulia; Frost, Christopher; Letiche, Manon; Farabolini, Wilfrid; Gilardi, Antonio; Corsini, Roberto; Puchner, Helmut (IEEE, 2020)The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, ...
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications Coronetti, Andrea; Garcìa Alìa, Rubén; Wang, Jialei; Tali, Maris; Cecchetto, Matteo; Cazzaniga, Carlo; Javanainen, Arto; Saigné, Frédéric; Leroux, Paul (IEEE, 2021)Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for ...
Cecchetto, Matteo; Alia, Ruben Garcia; Wrobel, Frederic; Coronetti, Andrea; Bilko, Kacper; Lucsanyi, David; Fiore, Salvatore; Bazzano, Giulia; Pirovano, Elisa; Nolte, Ralf (Institute of Electrical and Electronics Engineers (IEEE), 2021)Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs manufactured in scaled technologies, with respect to high-energy neutrons. Their contribution is evaluated in accelerator, ...
Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers, 2019)High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the ...
The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance Coronetti, Andrea; Alia Garcia, Ruben; Cerutti, Francesco; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigne, Frederic (Institute of Electrical and Electronics Engineers (IEEE), 2021)Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event ...