Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions
Andreou, C. M., González-Castaño, D. M., Gerardin, S., Bagatin, M., Rodriguez, F. G., Paccagnella, A., . . . Georgiou, J. (2019). Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions. Electronics, 8 (5), 562. doi:10.3390/electronics8050562
Published in
ElectronicsAuthors
Date
2019Discipline
FysiikkaCopyright
© authors, 2019.
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.
...


Publisher
MDPI AGISSN Search the Publication Forum
2079-9292Keywords
säteilyfysiikka mikroelektroniikka mikropiirit ionisoiva säteily gammasäteily röntgensäteily hiukkassäteily analog single-event transient (ASET) bandgap voltage reference (BGR) CMOS analog integrated circuits gamma-rays heavy-ions ionization protons radiation hardening by design (RHBD) reference circuits single-event effects (SEE) space electronics total ionization dose (TID) voltage reference X-rays
Metadata
Show full item recordCollections
License
Related items
Showing items with similar title or keywords.
-
Single-event effects of space and atmospheric radiation on memory components
Bosser, Alexandre Louis (University of Jyväskylä, 2017)Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory ... -
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
Söderström, Daniel; Matana Luza, Lucas; Kettunen, Heikki; Javanainen, Arto; Farabolini, Wilfrid; Gilardi, Antonio; Coronetti, Andrea; Poivey, Christian; Dilillo, Luigi (Institute of Electrical and Electronics Engineers (IEEE), 2021)This study investigates the response of synchronous dynamic random access memories to energetic electrons, and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with ... -
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ... -
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications
Coronetti, Andrea; Garcìa Alìa, Rubén; Wang, Jialei; Tali, Maris; Cecchetto, Matteo; Cazzaniga, Carlo; Javanainen, Arto; Saigné, Frédéric; Leroux, Paul (IEEE, 2021)Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for ... -
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
Martinella, C.; Ziemann, T.; Stark, R.; Tsibizov, A.; Voss, K. O.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, A. (IEEE, 2020)Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial SiC VD-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage ...