Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc
Ghiyasi, R., Philip, A., Liu, J., Julin, J., Sajavaara, T., Nolan, M., & Karppinen, M. (2022). Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc. Chemistry of Materials, 34(11), 5241-5248. https://doi.org/10.1021/acs.chemmater.2c00907
Published inChemistry of Materials
Liu, Ji |
© The Authors. Published by American Chemical Society
We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process. The reaction mechanism is addressed by computational density functional theory (DFT) modeling. We moreover carry out preliminary tests with CuCl2 and Ni(thd)2 in combination with DEZ to confirm that these processes yield Cu–Zn and Ni–Zn thin films with DEZ as well. Thus, we envision an opening of a new ALD approach based on DEZ for intermetallic/metal alloy thin films. ...
PublisherAmerican Chemical Society (ACS)
Publication in research information system
MetadataShow full item record
Additional information about fundingThis project has received funding from the European Union’s Horizon 2020 Research and Innovation Programme under the Marie Skłodowska-Curie grant agreement (Grant No. 765378) and the Academy of Finland (Flagship PREIN). A.P. gratefully acknowledges the PoDoCo funding by the Finnish Foundation for Technology Promotion. J.L. and M.N. acknowledge funding support from the Science Foundation Ireland through the SFI-NSF China Partnership, Grant No. 17/NSFC/5279. The authors also gratefully acknowledge the use of the RawMatters Finland Infrastructure (RAMI) at Aalto University and support and computational resources from the Irish Centre for High-End Computing (ICHEC) and the SFI funded Tyndall computing resources. ...
Showing items with similar title or keywords.
Kvamme, Kristian B.; Ruud, Amund; Weibye, Kristian; Sajavaara, Timo; Nilsen, Ola (American Institute of Physics, 2021)We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and ...
Cao, LiAo; Mattelaer, Felix; Sajavaara, Timo; Dendooven, Jolien; Detavernier, Christophe (American Institute of Physics, 2020)For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid ...
Atomic layer deposition of localised boron- and hydrogen-doped aluminium oxide using trimethyl borate as a dopant precursor Mattelaer, Felix; Van Daele, Michiel; Minjauw, Matthias M.; Nisula, Mikko; Elliott, Simon D.; Sajavaara, Timo; Dendooven, Jolien; Detavernier, Christophe (American Chemical Society, 2020)Atomic layer deposition (ALD) of boron-containing films has been mainly studied for use in 2D materials and for B-doping of Si. Furthermore, lithium-containing borates show great promise as solid electrolyte coatings for ...
Kinnunen, Sami; Arstila, Kai; Sajavaara, Timo (Elsevier, 2021)In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited ...
In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres Broas, Mikael; Lemettinen, Jori; Sajavaara, Timo; Tilli, Markku; Vuorinen, Vesa; Suihkonen, Sami; Paulasto-Kröckel, Mervi (Elsevier BV, 2019)Atomic-layer-deposited Al2O3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during ...