Phosphites as precursors in atomic layer deposition thin film synthesis
Kvamme, K. B., Ruud, A., Weibye, K., Sajavaara, T., & Nilsen, O. (2021). Phosphites as precursors in atomic layer deposition thin film synthesis. Journal of Vacuum Science and Technology A, 39, Article 032404. https://doi.org/10.1116/6.0000844
Published inJournal of Vacuum Science and Technology A
© 2021 the Authors
We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence, and ion beam analysis for composition analysis, spectroscopic ellipsometry for thickness, and FTIR for local structure.
PublisherAmerican Institute of Physics
Publication in research information system
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Additional information about fundingThe authors gratefully acknowledge the Research Council of Norway (Grant Agreement Nos. Nano-MILIB, 143732 and Solib, 622304) for financial support.
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