Phosphites as precursors in atomic layer deposition thin film synthesis
Kvamme, K. B., Ruud, A., Weibye, K., Sajavaara, T., & Nilsen, O. (2021). Phosphites as precursors in atomic layer deposition thin film synthesis. Journal of Vacuum Science and Technology A, 39(3), Article 032404. https://doi.org/10.1116/6.0000844
Julkaistu sarjassa
Journal of Vacuum Science and Technology APäivämäärä
2021Tekijänoikeudet
© 2021 the Authors
We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence, and ion beam analysis for composition analysis, spectroscopic ellipsometry for thickness, and FTIR for local structure.
Julkaisija
American Institute of PhysicsISSN Hae Julkaisufoorumista
0734-2101Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/51892849
Metadata
Näytä kaikki kuvailutiedotKokoelmat
Lisätietoja rahoituksesta
The authors gratefully acknowledge the Research Council of Norway (Grant Agreement Nos. Nano-MILIB, 143732 and Solib, 622304) for financial support.Lisenssi
Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
-
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
Cao, LiAo; Mattelaer, Felix; Sajavaara, Timo; Dendooven, Jolien; Detavernier, Christophe (American Institute of Physics, 2020)For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid ... -
Atomic layer deposition of localised boron- and hydrogen-doped aluminium oxide using trimethyl borate as a dopant precursor
Mattelaer, Felix; Van Daele, Michiel; Minjauw, Matthias M.; Nisula, Mikko; Elliott, Simon D.; Sajavaara, Timo; Dendooven, Jolien; Detavernier, Christophe (American Chemical Society, 2020)Atomic layer deposition (ALD) of boron-containing films has been mainly studied for use in 2D materials and for B-doping of Si. Furthermore, lithium-containing borates show great promise as solid electrolyte coatings for ... -
Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors
Kinnunen, Sami; Arstila, Kai; Sajavaara, Timo (Elsevier, 2021)In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited ... -
Low-temperature thermal and plasma-enhanced atomic layer deposition of metal oxide thin films
Napari, Mari (University of Jyväskylä, 2017)Atomic layer deposition (ALD) is a method for thin film fabrication with atomic level precision. This thesis focuses on low-temperature thermal and plasma- enhanced ALD and presents results on thin film growth by these ... -
Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides
Seemen, Helina; Rähn, Mihkel; Kalam, Kristjan; Sajavaara, Timo; Dueñas, Salvador; Castán, Helena; Link, Joosep; Stern, Raivo; Kukli, Kaupo; Tamm, Aile (Electrochemical Society, 2018)Five-layer crystalline thin film structures were formed, consisting of ZrO2 and Co3O4 alternately grown on Si(100) substrates by atomic layer deposition at 300◦C using ZrCl4 and Co(acac)3 as the metal precursors and ozone ...
Ellei toisin mainittu, julkisesti saatavilla olevia JYX-metatietoja (poislukien tiivistelmät) saa vapaasti uudelleenkäyttää CC0-lisenssillä.