A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
Cao, L., Mattelaer, F., Sajavaara, T., Dendooven, J., & Detavernier, C. (2020). A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films. Journal of Vacuum Science and Technology A, 38(2), Article 022417. https://doi.org/10.1116/1.5139631
Published inJournal of Vacuum Science and Technology A
© 2020 Author(s)
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1–1.4 Å/cycle for substrate temperatures ranging from 100 to 200 °C. Film morphology, surface roughness, and composition have been studied with different characterization techniques.
PublisherAmerican Institute of Physics
ISSN Search the Publication Forum0734-2101
Publication in research information system
MetadataShow full item record
Additional information about fundingThis work was supported by the M-ERA CALDERA project and the Fund for Scientific Research Flanders (FWO). Jolien Dendooven acknowledges the FWO for a postdoctoral fellowship.
Showing items with similar title or keywords.
Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films Hashemi, Fatemeh S. M.; Cao, LiAo; Mattelaer, Felix; Sajavaara, Timo; van Ommen, J. Ruud; Detavernier, Christophe (AIP Publishing LLC, 2019)Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for the deposition of alumina, different chemicals have been investigated over the years to replace it. The authors have ...
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition : Growth and mechanical properties Ylivaara, Oili M. E.; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo-Pekka; Ronkainen, Helena; Puurunen, Riikka L. (American Institute of Physics, 2017)Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, ...
Phosphites as precursors in atomic layer deposition thin film synthesis Kvamme, Kristian B.; Ruud, Amund; Weibye, Kristian; Sajavaara, Timo; Nilsen, Ola (American Institute of Physics, 2021)We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and ...
Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition Ylivaara, Oili M. E.; Langner, Andreas; Ek, Satu; Malm, Jari; Julin, Jaakko; Laitinen, Mikko; Ali, Saima; Sintonen, Sakari; Lipsanen, Harri; Sajavaara, Timo; Puurunen, Riikka L. (American Vacuum Society, 2022)In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer ...
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas Perros, A.; Bosund, M.; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, L.; Huhtio, T.; Lipsanen, H. (American Vacuum Society, 2012)The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled ...