A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
Cao, L., Mattelaer, F., Sajavaara, T., Dendooven, J., & Detavernier, C. (2020). A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films. Journal of Vacuum Science and Technology A, 38(2), Article 022417. https://doi.org/10.1116/1.5139631
Published inJournal of Vacuum Science and Technology A
© 2020 Author(s)
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1–1.4 Å/cycle for substrate temperatures ranging from 100 to 200 °C. Film morphology, surface roughness, and composition have been studied with different characterization techniques.
PublisherAmerican Institute of Physics
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Additional information about fundingThis work was supported by the M-ERA CALDERA project and the Fund for Scientific Research Flanders (FWO). Jolien Dendooven acknowledges the FWO for a postdoctoral fellowship.
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