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dc.contributor.authorMartinella, C.
dc.contributor.authorZiemann, T.
dc.contributor.authorStark, R.
dc.contributor.authorTsibizov, A.
dc.contributor.authorVoss, K. O.
dc.contributor.authorAlia, R. G.
dc.contributor.authorKadi, Y.
dc.contributor.authorGrossner, U.
dc.contributor.authorJavanainen, A.
dc.date.accessioned2020-06-24T08:17:50Z
dc.date.available2020-06-24T08:17:50Z
dc.date.issued2020
dc.identifier.citationMartinella, C., Ziemann, T., Stark, R., Tsibizov, A., Voss, K. O., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2020). Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs. <i>IEEE Transactions on Nuclear Science</i>, <i>67</i>(7), 1381-1389. <a href="https://doi.org/10.1109/TNS.2020.3002729" target="_blank">https://doi.org/10.1109/TNS.2020.3002729</a>
dc.identifier.otherCONVID_36006986
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/70403
dc.description.abstractHeavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial SiC VD-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded) only the gate-oxide (at JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain-source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights for the understanding of basic phenomena of Single Event Effects in SiC power devices.en
dc.format.mimetypeapplication/pdf
dc.languageeng
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.rightsCC BY 4.0
dc.subject.otherSiC VD-MOSFET
dc.subject.otherheavy-ion
dc.subject.othersingle event effect
dc.subject.othermicrobeam
dc.subject.otherleakage current degradation
dc.subject.otherSELC
dc.titleHeavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202006244595
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange1381-1389
dc.relation.issn0018-9499
dc.relation.numberinseries7
dc.relation.volume67
dc.type.versionacceptedVersion
dc.rights.copyright© 2020 the Author(s)
dc.rights.accesslevelopenAccessfi
dc.subject.ysoionisoiva säteily
dc.subject.ysopuolijohteet
dc.subject.ysosäteilyfysiikka
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p459
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.1109/TNS.2020.3002729
jyx.fundinginformationThis work has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement No 730871 and from the ETH Zurich Foundation. Moreover, this work was in part supported by European Space Agency under Contract 4000124504/18/NL/KML/zk.
dc.type.okmA1


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