Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
Martinella, C., Ziemann, T., Stark, R., Tsibizov, A., Voss, K. O., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2020). Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs. IEEE Transactions on Nuclear Science, 67(7), 1381-1389. https://doi.org/10.1109/TNS.2020.3002729
Published inIEEE Transactions on Nuclear Science
Kadi, Y. |
© 2020 the Author(s)
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial SiC VD-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded) only the gate-oxide (at JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain-source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights for the understanding of basic phenomena of Single Event Effects in SiC power devices.
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Additional information about fundingThis work has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement No 730871 and from the ETH Zurich Foundation. Moreover, this work was in part supported by European Space Agency under Contract 4000124504/18/NL/KML/zk.
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