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dc.contributor.authorBall, D.R.
dc.contributor.authorGalloway, K.F.
dc.contributor.authorJohnson, R.A.
dc.contributor.authorAlles, M.L.
dc.contributor.authorSternberg, A.L.
dc.contributor.authorSierawski, B.D.
dc.contributor.authorWitulski, A.F.
dc.contributor.authorReed, R.A.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorHutson, J.M.
dc.contributor.authorJavanainen, A.
dc.contributor.authorLauenstein, J-M.
dc.date.accessioned2020-04-17T05:14:03Z
dc.date.available2020-04-17T05:14:03Z
dc.date.issued2020
dc.identifier.citationBall, D., Galloway, K., Johnson, R., Alles, M., Sternberg, A., Sierawski, B., Witulski, A., Reed, R., Schrimpf, R., Hutson, J., Javanainen, A., & Lauenstein, J.-M. (2020). Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes. <i>IEEE Transactions on Nuclear Science</i>, <i>67</i>(1), 22-28. <a href="https://doi.org/10.1109/TNS.2019.2955922" target="_blank">https://doi.org/10.1109/TNS.2019.2955922</a>
dc.identifier.otherCONVID_33670031
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/68570
dc.description.abstractHeavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.en
dc.format.mimetypeapplication/pdf
dc.languageeng
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.rightsIn Copyright
dc.subject.othersilicon carbide
dc.subject.otherSiC
dc.subject.otherpower
dc.subject.otherMOSFET
dc.subject.otherdiode
dc.subject.otherheavy ion
dc.subject.othersingle-event burnout
dc.subject.otherSEB
dc.subject.otherdegradation
dc.titleIon-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202004172793
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.description.reviewstatuspeerReviewed
dc.format.pagerange22-28
dc.relation.issn0018-9499
dc.relation.numberinseries1
dc.relation.volume67
dc.type.versionacceptedVersion
dc.rights.copyright© 2019 IEEE
dc.rights.accesslevelopenAccessfi
dc.subject.ysodiodit
dc.subject.ysosäteilyfysiikka
dc.subject.ysopuolijohteet
dc.subject.ysoionisoiva säteily
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p13006
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
jyx.subject.urihttp://www.yso.fi/onto/yso/p459
dc.rights.urlhttp://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi10.1109/TNS.2019.2955922
jyx.fundinginformationThis work was supported in part by the National Aeronautics and Space Administration (NASA) Early Stage Innovation (ESI) Program under Grant NNX17AD09G, in part by the NASA Goddard through the NASA Electronic Parts and Packaging Program (NEPP), in part by the University of Jyväskylä through the European Space Agency/European Space Research and Technology Centre (ESA/ESTEC) Program under Contract 4000111630/14/NL/PA, and in part by the Academy of Finland under Project 2513553.


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