Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Perros, A., Bosund, M., Sajavaara, T., Laitinen, M., Sainiemi, L., Huhtio, T., & Lipsanen, H. (2012). Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 30(1), 11504. https://doi.org/10.1116/1.3664306
© 2012 American Vacuum Society. Published by AIP. Published in this repository with the kind permission of the publisher.
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SFþ x and Oþ chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF6 based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable. ...
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