dc.contributor.author | Cao, LiAo | |
dc.contributor.author | Mattelaer, Felix | |
dc.contributor.author | Sajavaara, Timo | |
dc.contributor.author | Dendooven, Jolien | |
dc.contributor.author | Detavernier, Christophe | |
dc.date.accessioned | 2020-02-25T08:22:22Z | |
dc.date.available | 2020-02-25T08:22:22Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | Cao, L., Mattelaer, F., Sajavaara, T., Dendooven, J., & Detavernier, C. (2020). A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films. <i>Journal of Vacuum Science and Technology A</i>, <i>38</i>(2), Article 022417. <a href="https://doi.org/10.1116/1.5139631" target="_blank">https://doi.org/10.1116/1.5139631</a> | |
dc.identifier.other | CONVID_34696254 | |
dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/67941 | |
dc.description.abstract | For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1–1.4 Å/cycle for substrate temperatures ranging from 100 to 200 °C. Film morphology, surface roughness, and composition have been studied with different characterization techniques. | en |
dc.format.mimetype | application/pdf | |
dc.language | eng | |
dc.language.iso | eng | |
dc.publisher | American Institute of Physics | |
dc.relation.ispartofseries | Journal of Vacuum Science and Technology A | |
dc.rights | In Copyright | |
dc.subject.other | plasma processing | |
dc.subject.other | atomic layer deposition | |
dc.title | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films | |
dc.type | article | |
dc.identifier.urn | URN:NBN:fi:jyu-202002252169 | |
dc.contributor.laitos | Fysiikan laitos | fi |
dc.contributor.laitos | Department of Physics | en |
dc.contributor.oppiaine | Fysiikka | fi |
dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
dc.contributor.oppiaine | Physics | en |
dc.contributor.oppiaine | Accelerator Laboratory | en |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
dc.description.reviewstatus | peerReviewed | |
dc.relation.issn | 0734-2101 | |
dc.relation.numberinseries | 2 | |
dc.relation.volume | 38 | |
dc.type.version | publishedVersion | |
dc.rights.copyright | © 2020 Author(s) | |
dc.rights.accesslevel | openAccess | fi |
dc.subject.yso | atomikerroskasvatus | |
dc.subject.yso | ohutkalvot | |
dc.subject.yso | alumiini | |
dc.format.content | fulltext | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p27468 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p16644 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p19563 | |
dc.rights.url | http://rightsstatements.org/page/InC/1.0/?language=en | |
dc.relation.doi | 10.1116/1.5139631 | |
jyx.fundinginformation | This work was supported by the M-ERA CALDERA project and the Fund for Scientific Research Flanders (FWO). Jolien Dendooven acknowledges the FWO for a postdoctoral fellowship. | |
dc.type.okm | A1 | |