Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
Hashemi, F. S. M., Cao, L., Mattelaer, F., Sajavaara, T., van Ommen, J. R., & Detavernier, C. (2019). Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films. Journal of Vacuum Science and Technology A, 37(4), Article 040901. https://doi.org/10.1116/1.5093402
Published inJournal of Vacuum Science and Technology A
© The Authors, 2019.
Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for the deposition of alumina, different chemicals have been investigated over the years to replace it. The authors have investigated the use of aluminum tri-isopropoxide (TIPA) as an alternative alkoxide precursor for the safe and cost-effective deposition of alumina. In this work, TIPA is used as a stable Al source for atomic layer deposition (ALD) of Al2O3 when different oxidizing agents including water, oxygen plasma, water plasma, and ozone are employed. The authors have explored the deposition of Al2O3 using TIPA in ALD systems operating in vacuum and atmospheric pressure conditions. For thermal and plasma processes in vacuum ALD, a growth rate of 1.1–2 Å/cycle achieved over a range of 140–300 °C is shown. Film density, roughness, and composition have been tested using various characterization techniques confirming comparable film properties to the thermal ALD of trimethylaluminum and water. The thermal water process at atmospheric pressure ALD (AP-ALD) resulted in a growth rate of up to 1.1 Å/cycle with residual carbon below the XPS detection limit. AP-ALD on nanoparticles shows different growth modes on TiO2 versus SiO2 nanoparticle surfaces confirmed by transmission electron microscopy analysis. Using TIPA as an ALD precursor would open up the possibility for a safer and cost-effective process for deposition of Al2O3 in various applications. ...
PublisherAIP Publishing LLC
Publication in research information system
MetadataShow full item record
Additional information about fundingThis work is supported by the M-ERA CALDERA project, the Fund for Scientific Research Flanders (FWO), and the Dutch Research Council (NWO). Timo Hatanpää (University of Helsinki) performed TGA measurements and vapor pressure calculations of TIPA.
Showing items with similar title or keywords.
Cao, LiAo; Mattelaer, Felix; Sajavaara, Timo; Dendooven, Jolien; Detavernier, Christophe (American Institute of Physics, 2020)For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid ...
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas Perros, A.; Bosund, M.; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, L.; Huhtio, T.; Lipsanen, H. (American Vacuum Society, 2012)The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled ...
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films Broas, Mikael; Sippola, Perttu; Sajavaara, Timo; Vuorinen, Vesa; Perros, Alexander Pyymaki; Lipsanen, Harri; Paulasto-Kröckel, Mervi (American Institute of Physics, 2016)Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in ...
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition : Growth and mechanical properties Ylivaara, Oili M. E.; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo-Pekka; Ronkainen, Helena; Puurunen, Riikka L. (American Institute of Physics, 2017)Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, ...
Atomic layer deposition of localised boron- and hydrogen-doped aluminium oxide using trimethyl borate as a dopant precursor Mattelaer, Felix; Van Daele, Michiel; Minjauw, Matthias M.; Nisula, Mikko; Elliott, Simon D.; Sajavaara, Timo; Dendooven, Jolien; Detavernier, Christophe (American Chemical Society, 2020)Atomic layer deposition (ALD) of boron-containing films has been mainly studied for use in 2D materials and for B-doping of Si. Furthermore, lithium-containing borates show great promise as solid electrolyte coatings for ...