Show simple item record

dc.contributor.authorJohnson, R. A.
dc.contributor.authorWitulski, A. F.
dc.contributor.authorBall, D. R.
dc.contributor.authorGalloway, K. F.
dc.contributor.authorSternberg, A. L.
dc.contributor.authorReed, R. A.
dc.contributor.authorSchrimpf, R. D.
dc.contributor.authorAlles, J. M.
dc.contributor.authorLauenstein, J. M.
dc.contributor.authorJavanainen, A.
dc.contributor.authorRaman, A.
dc.contributor.authorChakraborty, P. S.
dc.contributor.authorArslanbekov, R. R.
dc.date.accessioned2019-10-17T08:33:33Z
dc.date.available2019-10-17T08:33:33Z
dc.date.issued2020
dc.identifier.citationJohnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, J. M., Lauenstein, J. M., Javanainen, A., Raman, A., Chakraborty, P. S., & Arslanbekov, R.R. (2020). Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes. <i>IEEE Transactions on Nuclear Science</i>, <i>67</i>(1), 135-139. <a href="https://doi.org/10.1109/TNS.2019.2947866" target="_blank">https://doi.org/10.1109/TNS.2019.2947866</a>
dc.identifier.otherCONVID_33260673
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/65926
dc.description.abstractThe onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.en
dc.format.mimetypeapplication/pdf
dc.languageeng
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.rightsIn Copyright
dc.subject.otherSchottky diodes
dc.subject.otherSilicon carbide
dc.subject.othersingle-event effects
dc.subject.othervertical MOSFET
dc.titleUnifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201910174498
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.description.reviewstatuspeerReviewed
dc.format.pagerange135-139
dc.relation.issn0018-9499
dc.relation.numberinseries1
dc.relation.volume67
dc.type.versionacceptedVersion
dc.rights.copyright© 2019 IEEE.
dc.rights.accesslevelopenAccessfi
dc.subject.ysoelektroniikkakomponentit
dc.subject.ysopuolijohteet
dc.subject.ysosäteilyfysiikka
dc.subject.ysodiodit
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p9652
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p13006
dc.rights.urlhttp://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi10.1109/TNS.2019.2947866
jyx.fundinginformationThis work was supported by an Early Stage Innovations grant from NASA’s Space Technology Research Grants Program, grant number NNX17AD09G, with additional support from the NASA Electronic Parts and Packaging Program and NASA Phase II SBIR with CFDRC Corporation, Subcontract 2016052


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

In Copyright
Except where otherwise noted, this item's license is described as In Copyright