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dc.contributor.authorMartinella, Corinna
dc.contributor.authorStark, R.
dc.contributor.authorZiemann, T.
dc.contributor.authorAlia, R. G.
dc.contributor.authorKadi, Y.
dc.contributor.authorGrossner, U.
dc.contributor.authorJavanainen, Arto
dc.date.accessioned2019-07-22T07:36:02Z
dc.date.available2019-07-22T07:36:02Z
dc.date.issued2019
dc.identifier.citationMartinella, C., Stark, R., Ziemann, T., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2019). Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs. <i>IEEE Transactions on Nuclear Science</i>, <i>66</i>(7), 1702-1709. <a href="https://doi.org/10.1109/TNS.2019.2907669" target="_blank">https://doi.org/10.1109/TNS.2019.2907669</a>
dc.identifier.otherCONVID_28991108
dc.identifier.otherTUTKAID_81072
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/65082
dc.description.abstractHigh sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path forms between drain and gate, while at higher bias the heavy ion induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.fi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.rightsIn Copyright
dc.subject.othersilicon carbide
dc.subject.otherMOSFET
dc.subject.otherradiation effects
dc.subject.otherlogic gates
dc.subject.otherleakage currents
dc.subject.otherSiC power MOSFETs
dc.subject.otherheavy ion irradiation
dc.subject.othergate leakage
dc.subject.othersingle event effects
dc.titleCurrent Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201907173643
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2019-07-17T12:15:16Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange1702-1709
dc.relation.issn0018-9499
dc.relation.numberinseries7
dc.relation.volume66
dc.type.versionacceptedVersion
dc.rights.copyright© 2018 IEEE.
dc.rights.accesslevelopenAccessfi
dc.subject.ysopilaantuminen
dc.subject.ysoionit
dc.subject.ysosäteilyfysiikka
dc.subject.ysoionisoiva säteily
dc.subject.ysoelektroniikkakomponentit
dc.subject.ysotransistorit
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p4660
jyx.subject.urihttp://www.yso.fi/onto/yso/p9015
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p459
jyx.subject.urihttp://www.yso.fi/onto/yso/p9652
jyx.subject.urihttp://www.yso.fi/onto/yso/p16104
dc.rights.urlhttp://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi10.1109/TNS.2019.2907669
jyx.fundinginformationETH Zurich Foundation; 10.13039/501100000844-European Space Agency;
dc.type.okmA1


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