Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto

doi:10.1109/TNS.2019.2907669

dc.contributor.author	Martinella, Corinna
dc.contributor.author	Stark, R.
dc.contributor.author	Ziemann, T.
dc.contributor.author	Alia, R. G.
dc.contributor.author	Kadi, Y.
dc.contributor.author	Grossner, U.
dc.contributor.author	Javanainen, Arto
dc.date.accessioned	2019-07-22T07:36:02Z
dc.date.available	2019-07-22T07:36:02Z
dc.date.issued	2019
dc.identifier.citation	Martinella, C., Stark, R., Ziemann, T., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2019). Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs. <i>IEEE Transactions on Nuclear Science</i>, <i>66</i>(7), 1702-1709. <a href="https://doi.org/10.1109/TNS.2019.2907669" target="_blank">https://doi.org/10.1109/TNS.2019.2907669</a>
dc.identifier.other	CONVID_28991108
dc.identifier.other	TUTKAID_81072
dc.identifier.uri	https://jyx.jyu.fi/handle/123456789/65082
dc.description.abstract	High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path forms between drain and gate, while at higher bias the heavy ion induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.	fi
dc.format.mimetype	application/pdf
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartofseries	IEEE Transactions on Nuclear Science
dc.rights	In Copyright
dc.subject.other	silicon carbide
dc.subject.other	MOSFET
dc.subject.other	radiation effects
dc.subject.other	logic gates
dc.subject.other	leakage currents
dc.subject.other	SiC power MOSFETs
dc.subject.other	heavy ion irradiation
dc.subject.other	gate leakage
dc.subject.other	single event effects
dc.title	Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
dc.type	article
dc.identifier.urn	URN:NBN:fi:jyu-201907173643
dc.contributor.laitos	Fysiikan laitos	fi
dc.contributor.laitos	Department of Physics	en
dc.contributor.oppiaine	Kiihdytinlaboratorio	fi
dc.contributor.oppiaine	Accelerator Laboratory	en
dc.type.uri	http://purl.org/eprint/type/JournalArticle
dc.date.updated	2019-07-17T12:15:16Z
dc.type.coar	http://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatus	peerReviewed
dc.format.pagerange	1702-1709
dc.relation.issn	0018-9499
dc.relation.numberinseries	7
dc.relation.volume	66
dc.type.version	acceptedVersion
dc.rights.copyright	© 2018 IEEE.
dc.rights.accesslevel	openAccess	fi
dc.subject.yso	pilaantuminen
dc.subject.yso	ionit
dc.subject.yso	säteilyfysiikka
dc.subject.yso	ionisoiva säteily
dc.subject.yso	elektroniikkakomponentit
dc.subject.yso	transistorit
dc.format.content	fulltext
jyx.subject.uri	http://www.yso.fi/onto/yso/p4660
jyx.subject.uri	http://www.yso.fi/onto/yso/p9015
jyx.subject.uri	http://www.yso.fi/onto/yso/p11069
jyx.subject.uri	http://www.yso.fi/onto/yso/p459
jyx.subject.uri	http://www.yso.fi/onto/yso/p9652
jyx.subject.uri	http://www.yso.fi/onto/yso/p16104
dc.rights.url	http://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi	10.1109/TNS.2019.2907669
jyx.fundinginformation	ETH Zurich Foundation; 10.13039/501100000844-European Space Agency;
dc.type.okm	A1

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